onsemi Single FETs, MOSFETs NTB75N03L09G

Description
N-Channel 30V 75A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount D2PAK
Request a Quote Datasheet
Description
N-Channel 30V 75A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTB75N03L09G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTB75N03L09G-ND
Single FETs, MOSFETs NTB75N03L09G-ND
N-Channel 30V 75A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount D2PAK

N-Channel 30V 75A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount D2PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB75N03L09G - 1083721-NTB75N03L09G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB75N03L09G
1083721-NTB75N03L09G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB75N03L09G 1083721-NTB75N03L09G
Manufacturer: ON Semiconductor Win Source Part Number: 1083721-NTB75N03L09G Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 75nC @ 5V Max Input Capacitance: 5635pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 37.5A, 5V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1083721-NTB75N03L09G
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 75nC @ 5V
Max Input Capacitance: 5635pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 37.5A, 5V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTB75N03L09G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTB75N03L09G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTB75N03L09G
MOSFET N-CH 30V 75A D2PAK

MOSFET N-CH 30V 75A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTB75N03L09G-ND 1083721-NTB75N03L09G NTB75N03L09G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB75N03L09G Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK 75 nC @ 5 V
V(BR)DSS 30 volts
Unlock Full Specs
to access all available technical data