onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB65N02RT4 NTB65N02RT4

Description
Manufacturer: ON Semiconductor Win Source Part Number: 124094-NTB65N02RT4 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.04W (Ta), 62.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 65A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 9.5nC @ 4.5V Max Input Capacitance: 1330pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.2 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 124094-NTB65N02RT4 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.04W (Ta), 62.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 65A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 9.5nC @ 4.5V Max Input Capacitance: 1330pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.2 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB65N02RT4 - 124094-NTB65N02RT4 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB65N02RT4
124094-NTB65N02RT4
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB65N02RT4 124094-NTB65N02RT4
Manufacturer: ON Semiconductor Win Source Part Number: 124094-NTB65N02RT4 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.04W (Ta), 62.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 65A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 9.5nC @ 4.5V Max Input Capacitance: 1330pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.2 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 124094-NTB65N02RT4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.04W (Ta), 62.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 65A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 9.5nC @ 4.5V
Max Input Capacitance: 1330pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.2 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 124094-NTB65N02RT4
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB65N02RT4
Polarity N-Channel; N-Channel
V(BR)DSS 25 volts
PD 1040 to 62500 milliwatts
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