Manufacturer: ON Semiconductor
Win Source Part Number: 1083715-NTB6413ANT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 136W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 42A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 51nC @ 10V
Max Input Capacitance: 1800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 28 mOhm @ 42A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 100V 42A D2PAK
N-CH Power MOSFET 100V 42A D2PAK SMT Product overview: NTB6413ANT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 42A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 42A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTB6413ANT4G can be used for catalog matching and distributor lookup.
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MOSFET Transistor, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:42A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Product Range:- RoHS Compliant: Yes
POWER FIELD-EFFECT TRANSISTOR, 42A I(D), 100V, 0.028OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, D2PAK-3. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Radwell International | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1083715-NTB6413ANT4G | NTB6413ANT4G | 278-NTB6413ANT4G | NTB6413ANT4GOSTR-ND | NTB6413ANT4G | NTB6413ANT4G | 63R4576 | 32326165 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB6413ANT4G | Single FETs, MOSFETs | 100V 42A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet Transistor, Full Reel; Channel Type Onsemi | Transistor |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | |||||
| PD | 136000 milliwatts | 136000 milliwatts | 136000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | |||||
| Package Type | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3 |
