MOSFET N-CH 60V 60A D2PAK
Manufacturer: ON Semiconductor
Win Source Part Number: 1083706-NTB60N06T4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 60A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 81nC @ 10V
Max Input Capacitance: 3220pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
N-Channel 60V 60A (Ta) 2.4W (Ta), 150W (Tj) Surface Mount D²PAK
(PRICE/TC),MOSFET, N-CH, 60V, 60A, TO-263-3, TRANSISTOR POLARITY:N CHANNEL, CONTINUOUS DRAIN CURRENT ID:60A, DRAIN SOURCE VOLTAGE VDS:60V, ON RESISTANCE RDS(ON):0.0115OHM, RDS(ON) TEST VOLTAGE VGS:10V, THRESHOLD VOLTAGE VGS:2.85V, POWER ROHS COMPLIANT: YE. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 60V 60A D2PAK
N CHANNEL MOSFET, 60V, 60A, D2-PAK, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; On Resistance Rds(on):0.0115ohm; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes
MOSFET, N-CH, 60V, 60A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0115ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.85V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Radwell International | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NTB60N06T4G | 1083706-NTB60N06T4G | NTB60N06T4GOSTR-ND | 32326141 | NTB60N06T4G | NTB60N06T4G | 45J2093 | 82Y7094 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB60N06T4G | Single FETs, MOSFETs | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | N Channel Mosfet, 60V, 60A, D2-Pak, Full Reel; Transistor Polarity Onsemi | Mosfet, N-Ch, 60V, 60A, To-263-3; Transistor Polarity Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| IDSS | 60000 milliamps | 60000 milliamps | 60000 milliamps | |||||
| PD | 2400 milliwatts | 2400 to 150000 milliwatts |
