onsemi Single FETs, MOSFETs NTB60N06T4G

Description
N-Channel 60V 60A (Ta) 2.4W (Ta), 150W (Tj) Surface Mount D²PAK
  • Single FETs, MOSFETs - NTB60N06T4GOSTR-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB60N06T4G - 1083706-NTB60N06T4G - Win Source Electronics
    Win Source Electronics
  • Transistor - 32326141 - Radwell International
    Radwell International
  • Single FETs, MOSFETs - NTB60N06T4G - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTB60N06T4G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 60V, 60A, D2-Pak, Full Reel; Transistor Polarity Onsemi - 45J2093 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, N-Ch, 60V, 60A, To-263-3; Transistor Polarity Onsemi - 82Y7094 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-Channel 60V 60A (Ta) 2.4W (Ta), 150W (Tj) Surface Mount D²PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTB60N06T4GOSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTB60N06T4GOSTR-ND
Single FETs, MOSFETs NTB60N06T4GOSTR-ND
N-Channel 60V 60A (Ta) 2.4W (Ta), 150W (Tj) Surface Mount D²PAK

N-Channel 60V 60A (Ta) 2.4W (Ta), 150W (Tj) Surface Mount D²PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB60N06T4G - 1083706-NTB60N06T4G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB60N06T4G
1083706-NTB60N06T4G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB60N06T4G 1083706-NTB60N06T4G
Manufacturer: ON Semiconductor Win Source Part Number: 1083706-NTB60N06T4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.4W (Ta), 150W (Tj) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 60A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 81nC @ 10V Max Input Capacitance: 3220pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1083706-NTB60N06T4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 60A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 81nC @ 10V
Max Input Capacitance: 3220pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Transistor - 32326141 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
32326141
Transistor 32326141
(PRICE/TC),MOSFET, N-CH, 60V, 60A, TO-263-3, TRANSISTOR POLARITY:N CHANNEL, CONTINUOUS DRAIN CURRENT ID:60A, DRAIN SOURCE VOLTAGE VDS:60V, ON RESISTANCE RDS(ON):0.0115OHM, RDS(ON) TEST VOLTAGE VGS:10V, THRESHOLD VOLTAGE VGS:2.85V, POWER ROHS COMPLIANT: YE. FREE 2 YEAR RADWELL WARRANTY

(PRICE/TC),MOSFET, N-CH, 60V, 60A, TO-263-3, TRANSISTOR POLARITY:N CHANNEL, CONTINUOUS DRAIN CURRENT ID:60A, DRAIN SOURCE VOLTAGE VDS:60V, ON RESISTANCE RDS(ON):0.0115OHM, RDS(ON) TEST VOLTAGE VGS:10V, THRESHOLD VOLTAGE VGS:2.85V, POWER ROHS COMPLIANT: YE. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - NTB60N06T4G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NTB60N06T4G
Single FETs, MOSFETs NTB60N06T4G
MOSFET N-CH 60V 60A D2PAK

MOSFET N-CH 60V 60A D2PAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTB60N06T4G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTB60N06T4G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTB60N06T4G
MOSFET N-CH 60V 60A D2PAK

MOSFET N-CH 60V 60A D2PAK

Supplier's Site
N Channel Mosfet, 60V, 60A, D2-Pak, Full Reel; Transistor Polarity Onsemi - 45J2093 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 60V, 60A, D2-Pak, Full Reel; Transistor Polarity Onsemi
45J2093
N Channel Mosfet, 60V, 60A, D2-Pak, Full Reel; Transistor Polarity Onsemi 45J2093
N CHANNEL MOSFET, 60V, 60A, D2-PAK, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; On Resistance Rds(on):0.0115ohm; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes

N CHANNEL MOSFET, 60V, 60A, D2-PAK, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; On Resistance Rds(on):0.0115ohm; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes

Supplier's Site
Mosfet, N-Ch, 60V, 60A, To-263-3; Transistor Polarity Onsemi - 82Y7094 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 60A, To-263-3; Transistor Polarity Onsemi
82Y7094
Mosfet, N-Ch, 60V, 60A, To-263-3; Transistor Polarity Onsemi 82Y7094
MOSFET, N-CH, 60V, 60A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0115ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.85V; Power RoHS Compliant: Yes

MOSFET, N-CH, 60V, 60A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0115ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.85V; Power RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
NTB60N06T4G
MOSFET NTB60N06T4G
MOSFET 60V 60A N-Channel

MOSFET 60V 60A N-Channel

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Radwell International ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number NTB60N06T4GOSTR-ND 1083706-NTB60N06T4G 32326141 NTB60N06T4G NTB60N06T4G 45J2093 82Y7094 NTB60N06T4G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB60N06T4G Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 60V, 60A, D2-Pak, Full Reel; Transistor Polarity Onsemi Mosfet, N-Ch, 60V, 60A, To-263-3; Transistor Polarity Onsemi MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 3220 pF @ 25 V TO-3 TO-3; TO-263
V(BR)DSS 60 volts 60 volts
PD 2400 to 150000 milliwatts 2400 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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