onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB60N06LG NTB60N06LG

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1083708-NTB60N06LG Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.4W (Ta), 150W (Tj) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 60A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 65nC @ 5V Max Input Capacitance: 3075pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 16 mOhm @ 30A, 5V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1083708-NTB60N06LG Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.4W (Ta), 150W (Tj) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 60A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 65nC @ 5V Max Input Capacitance: 3075pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 16 mOhm @ 30A, 5V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance
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Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB60N06LG - 1083708-NTB60N06LG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB60N06LG
1083708-NTB60N06LG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB60N06LG 1083708-NTB60N06LG
Manufacturer: ON Semiconductor Win Source Part Number: 1083708-NTB60N06LG Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.4W (Ta), 150W (Tj) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 60A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 65nC @ 5V Max Input Capacitance: 3075pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 16 mOhm @ 30A, 5V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1083708-NTB60N06LG
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 60A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 65nC @ 5V
Max Input Capacitance: 3075pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 16 mOhm @ 30A, 5V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - NTB60N06LG-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTB60N06LG-ND
Single FETs, MOSFETs NTB60N06LG-ND
N-Channel 60V 60A (Ta) 2.4W (Ta), 150W (Tj) Surface Mount D²PAK

N-Channel 60V 60A (Ta) 2.4W (Ta), 150W (Tj) Surface Mount D²PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTB60N06LG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTB60N06LG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTB60N06LG
MOSFET N-CH 60V 60A D2PAK

MOSFET N-CH 60V 60A D2PAK

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1083708-NTB60N06LG NTB60N06LG-ND NTB60N06LG
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB60N06LG Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts
PD 2400 to 150000 milliwatts
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