onsemi Single FETs, MOSFETs NTB5411NT4G

Description
N-Channel 60V 80A (Tc) 166W (Tc) Surface Mount D²PAK
Request a Quote Datasheet
Description
N-Channel 60V 80A (Tc) 166W (Tc) Surface Mount D²PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTB5411NT4G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTB5411NT4G-ND
Single FETs, MOSFETs NTB5411NT4G-ND
N-Channel 60V 80A (Tc) 166W (Tc) Surface Mount D²PAK

N-Channel 60V 80A (Tc) 166W (Tc) Surface Mount D²PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB5411NT4G - 1083703-NTB5411NT4G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB5411NT4G
1083703-NTB5411NT4G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB5411NT4G 1083703-NTB5411NT4G
Manufacturer: ON Semiconductor Win Source Part Number: 1083703-NTB5411NT4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 166W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 130nC @ 10V Max Input Capacitance: 4500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 1083703-NTB5411NT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 166W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 130nC @ 10V
Max Input Capacitance: 4500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore, Singapore
60V 75A 12.5mOhm MOSFET Transistor
278-NTB5411NT4G
60V 75A 12.5mOhm MOSFET Transistor 278-NTB5411NT4G
MOSFET NFET D2PAK 60V 75A 12.5mOhm Product overview: NTB5411NT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 75A, 12.5mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 75A, 12.5mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTB5411NT4G can be used for catalog matching and distributor lookup.

MOSFET NFET D2PAK 60V 75A 12.5mOhm Product overview: NTB5411NT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 75A, 12.5mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 75A, 12.5mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTB5411NT4G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTB5411NT4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTB5411NT4G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTB5411NT4G
MOSFET N-CH 60V 80A D2PAK

MOSFET N-CH 60V 80A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTB5411NT4G-ND 1083703-NTB5411NT4G 278-NTB5411NT4G NTB5411NT4G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB5411NT4G 60V 75A 12.5mOhm MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 60 volts
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