Manufacturer: ON Semiconductor
Win Source Part Number: 025746-NTB45N06T4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.4W (Ta), 125W (Tj)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 45A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 46nC @ 10V
Max Input Capacitance: 1725pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 26 mOhm @ 22.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Motor Drive & Control, Industrial
N-Ch MOSFET 60V 45A 26mR D2PAK Product overview: NTB45N06T4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 45A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 45A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTB45N06T4G can be used for catalog matching and distributor lookup.
N-Channel 60V 45A (Ta) 2.4W (Ta), 125W (Tj) Surface Mount D²PAK
MOSFET N-CH 60V 45A D2PAK
N CHANNEL MOSFET, 60V, 45A, D2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:45A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes
MOSFET N-CH 60V 45A D2PAK
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 025746-NTB45N06T4G | 278-NTB45N06T4G | NTB45N06T4GOSTR-ND | NTB45N06T4G | NTB45N06T4G | 10N9712 | NTB45N06T4G |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB45N06T4G | 60V 45A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | N Channel Mosfet, 60V, 45A, D2-Pak; Channel Type Onsemi | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 60 volts | 60 volts | |||||
| PD | 2400 to 125000 milliwatts | 125000 milliwatts | 2400 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) |
