onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB30N20G NTB30N20G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1083694-NTB30N20G Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta), 214W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 30A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 100nC @ 10V Max Input Capacitance: 2335pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 81 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1083694-NTB30N20G Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta), 214W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 30A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 100nC @ 10V Max Input Capacitance: 2335pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 81 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB30N20G - 1083694-NTB30N20G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB30N20G
1083694-NTB30N20G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB30N20G 1083694-NTB30N20G
Manufacturer: ON Semiconductor Win Source Part Number: 1083694-NTB30N20G Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta), 214W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 30A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 100nC @ 10V Max Input Capacitance: 2335pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 81 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1083694-NTB30N20G
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta), 214W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 30A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 100nC @ 10V
Max Input Capacitance: 2335pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 81 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
N-Channel 30A 200V 0.081ohm MOSFET Transistor
278-NTB30N20G
N-Channel 30A 200V 0.081ohm MOSFET Transistor 278-NTB30N20G
30A, 200V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 418B-04, D2PAK-3 Product overview: NTB30N20G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30A, 200V, 0.081ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30A, 200V, 0.081ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTB30N20G can be used for catalog matching and distributor lookup.

30A, 200V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 418B-04, D2PAK-3 Product overview: NTB30N20G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30A, 200V, 0.081ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30A, 200V, 0.081ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTB30N20G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - NTB30N20G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTB30N20G-ND
Single FETs, MOSFETs NTB30N20G-ND
N-Channel 200V 30A (Ta) 2W (Ta), 214W (Tc) Surface Mount D²PAK

N-Channel 200V 30A (Ta) 2W (Ta), 214W (Tc) Surface Mount D²PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTB30N20G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTB30N20G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTB30N20G
MOSFET N-CH 200V 30A D2PAK

MOSFET N-CH 200V 30A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1083694-NTB30N20G 278-NTB30N20G NTB30N20G-ND NTB30N20G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB30N20G N-Channel 30A 200V 0.081ohm MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 200 volts
PD 2000 to 214000 milliwatts 214000 milliwatts
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