onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB30N06LG NTB30N06LG

Manufacturer: ON Semiconductor
Win Source Part Number: 1083690-NTB30N06LG
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 88.2W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 30A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 32nC @ 5V
Max Input Capacitance: 1150pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 46 mOhm @ 15A, 5V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient

Power MOSFET 60V 30A 46mOhm Single N-Channel D2PAK with Logic Level, D2PAK 2 LEAD, 50-TUBE Product overview: NTB30N06LG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 30A, 46mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 30A, 46mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTB30N06LG can be used for catalog matching and distributor lookup.

N-Channel 60V 30A (Ta) 88.2W (Tc) Surface Mount D²PAK