P-Channel 60V 27.5A (Ta) 120W (Tj) Surface Mount D²PAK
P-Channel 60V 27.5A (Ta) 120W (Tj) Surface Mount D²PAK
P-Channel 60V 27.5A (Ta) 120W (Tj) Surface Mount D²PAK
P-Channel MOSFET -60V, 27.5A, 82mΩ, D2PAK Product overview: NTB25P06T4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -60V, 27.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -60V, 27.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTB25P06T4G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 129725-NTB25P06T4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 120W (Tj)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 27.5A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 1680pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 82 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
MOSFET P-CH 60V 27.5A D2PAK
MOSFET P-CH 60V 27.5A D2PAK
MOSFET, P-CH, -60V, -27.5A, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:-27.5A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.07ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.8V; Power RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NTB25P06T4GOSTR-ND | 278-NTB25P06T4G | 129725-NTB25P06T4G | NTB25P06T4G | NTB25P06T4G | NTB25P06T4G | 50AC6473 |
| Product Name | Single FETs, MOSFETs | P-Channel -60V 27.5A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB25P06T4G | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -60V, -27.5A, To-263; Transistor Polarity Onsemi |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | |||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-263 | ||
| PD | 120000 milliwatts | 120000 milliwatts | 120000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| V(BR)DSS | 60 volts | 60 volts |
