onsemi Single FETs, MOSFETs NTB23N03RT4G

Description
N-Channel 25V 23A (Ta) 37.5W (Tj) Surface Mount D²PAK
Request a Quote Datasheet
Description
N-Channel 25V 23A (Ta) 37.5W (Tj) Surface Mount D²PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTB23N03RT4GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTB23N03RT4GOSTR-ND
Single FETs, MOSFETs NTB23N03RT4GOSTR-ND
N-Channel 25V 23A (Ta) 37.5W (Tj) Surface Mount D²PAK

N-Channel 25V 23A (Ta) 37.5W (Tj) Surface Mount D²PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB23N03RT4G - 126847-NTB23N03RT4G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB23N03RT4G
126847-NTB23N03RT4G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB23N03RT4G 126847-NTB23N03RT4G
Manufacturer: ON Semiconductor Win Source Part Number: 126847-NTB23N03RT4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 37.5W (Tj) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 23A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 3.76nC @ 4.5V Max Input Capacitance: 225pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 45 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 126847-NTB23N03RT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 37.5W (Tj)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 23A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 3.76nC @ 4.5V
Max Input Capacitance: 225pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 45 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
N-Channel 25V 23A 45 mOhm MOSFET Transistor
278-NTB23N03RT4G
N-Channel 25V 23A 45 mOhm MOSFET Transistor 278-NTB23N03RT4G
Power MOSFET 25V 23A 45 mOhm Single N-Channel D2PAK, D2PAK 2 LEAD, 800-REEL Product overview: NTB23N03RT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 25V, 23A, 45 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 23A, 45 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTB23N03RT4G can be used for catalog matching and distributor lookup.

Power MOSFET 25V 23A 45 mOhm Single N-Channel D2PAK, D2PAK 2 LEAD, 800-REEL Product overview: NTB23N03RT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 25V, 23A, 45 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 23A, 45 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTB23N03RT4G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTB23N03RT4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTB23N03RT4G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTB23N03RT4G
MOSFET N-CH 25V 23A D2PAK

MOSFET N-CH 25V 23A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTB23N03RT4GOSTR-ND 126847-NTB23N03RT4G 278-NTB23N03RT4G NTB23N03RT4G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB23N03RT4G N-Channel 25V 23A 45 mOhm MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK 225 pF @ 20 V
V(BR)DSS 25 volts
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