Manufacturer: ON Semiconductor
Win Source Part Number: 111689-NTB18N06LT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 48.4W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 15A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 20nC @ 5V
Max Input Capacitance: 440pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 100 mOhm @ 7.5A, 5V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
N-Channel 60V 15A (Tc) 48.4W (Tc) Surface Mount D2PAK
MOSFET N-CH 60V 15A D2PAK
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 15A I(D), 60V, 0.1OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, D2PAK-3. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Radwell International | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | RF Transistors |
| Product Number | 111689-NTB18N06LT4G | NTB18N06LT4GOSTR-ND | NTB18N06LT4G | 18731315 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB18N06LT4G | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 60 volts | |||
| PD | 48400 milliwatts |
