onsemi Single FETs, MOSFETs NTB18N06G

Description
N-Channel 60V 15A (Tc) 48.4W (Tc) Surface Mount D2PAK
Request a Quote Datasheet
Description
N-Channel 60V 15A (Tc) 48.4W (Tc) Surface Mount D2PAK
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - NTB18N06G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTB18N06G-ND
Single FETs, MOSFETs NTB18N06G-ND
N-Channel 60V 15A (Tc) 48.4W (Tc) Surface Mount D2PAK

N-Channel 60V 15A (Tc) 48.4W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1008789-NTB18N06G - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1008789-NTB18N06G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1008789-NTB18N06G
Win Source Part Number: 1008789-NTB18N06G Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 50 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 48.4W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 76 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: ONSONSNTB18N06G,2156 -NTB18N06G-ON Base Product Number: NTB18 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1008789-NTB18N06G
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 50
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 48.4W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 76 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: ONSONSNTB18N06G,2156-NTB18N06G-ON
Base Product Number: NTB18
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTB18N06G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTB18N06G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTB18N06G
MOSFET N-CH 60V 15A D2PAK

MOSFET N-CH 60V 15A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTB18N06G-ND 1008789-NTB18N06G NTB18N06G
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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