onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB13N10T4 NTB13N10T4

Manufacturer: ON Semiconductor
Win Source Part Number: 041958-NTB13N10T4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 64.7W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 13A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 550pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 165 mOhm @ 6.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
Application Field: Used in Automotive, Power Management

MOSFET N-CH 100V 13A D2PAK Product overview: NTB13N10T4 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 13A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-NTB13N10T4 can be used for catalog matching and distributor lookup.