The NTA4151PT1G is a P-channel MOSFET designed for high-side load switching and battery-operated systems, housed in an SC-75 package measuring 1.6 x 1.6 mm. It has a drain-to-source voltage rating of -20 V, a continuous drain current of -760 mA, and a maximum power dissipation of 301 mW. The device features a gate Zener for ESD protection, with a typical on-resistance of 0.26 Ω at -4.5 V gate drive and a gate-to-source ESD rating of 1800 V (human body model). It is Pb-free, halogen-free, and RoHS compliant. Thermal resistance from junction to ambient is 415 °C/W when mounted on FR4 with a 1 in² copper pad.
P CHANNEL MOSFET, -20V, 760mA SC-75, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:760mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:301mW RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 26AC2739 |
| Product Name | P Channel Mosfet, -20V, 760Ma Sc-75, Full Reel; Channel Type Onsemi |
| Polarity | P-Channel |