onsemi Bipolar Transistor Arrays, Pre-Biased NSVMUN5336DW1T1G

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363

Win Source Part Number: 963439-NSVMUN5336DW1T1G
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Series: Automotive, AEC-Q101
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 187mW
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
ECCN: EAR99
Fake Threat In the Open Market: 50 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: onsemi
Base Product Number: NSVMUN5336

Complementary NPN+PNP Bipolar Digital Transistor (BRT), 3000-REEL Product overview: NSVMUN5336DW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-NSVMUN5336DW1T1G can be used for catalog matching and distributor lookup.