The RF Transistor, part number 86X0913, is a complementary digital transistor available in a SOT-363 package. It features both NPN and PNP configurations, allowing for versatile applications in circuit design. The maximum collector-emitter voltage is rated at 50V, with a continuous collector current of 100mA. This device integrates a monolithic bias resistor network, which simplifies circuit design by reducing the number of external components needed, thus saving board space and potentially lowering system costs. The transistor is also RoHS compliant, ensuring it meets environmental regulations. Its thermal characteristics include a maximum total device dissipation of 187mW at 25¬8C, with a junction temperature range from -55¬8C to +150¬8C. This product is suitable for applications that require compact design and efficient performance.
Complementary Bipolar Digital Transistor (BRT), 3000-REEL Product overview: NSVMUN5312DW1T2G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-NSVMUN5312DW1T2G
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Win Source Part Number: 1117781-NSVMUN5312DW
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 250mW
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: onsemi
Other Names: NSVMUN5312DW1T2G-ND,
Base Product Number: NSVMUN5312
TRANS NPN/PNP 50V BIPO SC88-6
TRANS NPN/PNP 50V BIPO SC88-6
Bipolar Transistors - Pre-Biased SS SC88 BR XSTR DUAL 50V
RF TRANSISTOR, COMPL, 50V, 0.1A, SOT-363; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Resistor Ratio, R1 / R2:- RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | RF Transistors |
| Product Number | 293-NSVMUN5312DW1T2G | NSVMUN5312DW1T2GOSDKR-ND | 1117781-NSVMUN5312DW1T2G | NSVMUN5312DW1T2G | NSVMUN5312DW1T2G | NSVMUN5312DW1T2G | 86X0913 |
| Product Name | Bipolar Transistor | Bipolar Transistor Arrays, Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased | Bipolar Transistor Arrays, Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistors - Pre-Biased | Rf Transistor, Compl, 50V, 0.1A, Sot-363; Digital Transistor Polarity Onsemi |
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | 100 milliamps | |||
| VCEO | 50 volts | 50 volts | 50 volts | ||||
| PD | 250 milliwatts | ||||||
| Polarity | NPN; PNP | NPN; PNP | 1 NPN, 1 PNP - Pre-Biased (Dual); NPN; PNP | ||||
| Package Type | 6-TSSOP, SC-88, SOT-363 | SOT3 | 6-TSSOP, SC-88, SOT-363 | TO-3; SOT3 |
