PNP Bipolar Digital Transistor (BRT), SC-70 (SOT-323) 3 LEAD, 3000-REEL Product overview: NSVMUN5132T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-NSVMUN5132T1G can be used for catalog matching and distributor lookup.
TRANS PREBIAS PNP 50V SC70-3
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 202mW Surface Mount SC-70-3 (SOT323)
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 202mW Surface Mount SC-70-3 (SOT323)
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 202mW Surface Mount SC-70-3 (SOT323)
Manufacturer: ON Semiconductor
Win Source Part Number: 1083666-NSVMUN5132T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SC-70-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 1mA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 15 @ 5mA, 10V
Maximum Power Dissipation: 202mW
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
PNP Bipolar Digital Transistor (BRT)
TRANS PREBIAS PNP 50V SC70-3
PNP Bipolar Digital Transistor (BRT) / REEL
Bipolar Transistors - Pre-Biased SS BR XSTR PNP 50V
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 292-NSVMUN5132T1G | NSVMUN5132T1G | NSVMUN5132T1GOSDKR-ND | 1083666-NSVMUN5132T1G | NSVMUN5132T1G | NSVMUN5132T1G | 76T6714 | NSVMUN5132T1G |
| Product Name | Bipolar Transistor | Single, Pre-Biased Bipolar Transistors | Single, Pre-Biased Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - NSVMUN5132T1G | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Pnp Bipolar Digital Transistor (Brt) / Reel Onsemi | Bipolar Transistors - Pre-Biased | |
| Polarity | PNP | PNP - Pre-Biased; PNP | PNP | PNP; PNP - Pre-Biased | PNP | PNP | ||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | |||||
| VCEO | 50 volts | 50 volts | 50 volts | |||||
| PD | 202 milliwatts | |||||||
| TJ | -55 C (-67 F) |
