Dual PNP Bipolar Digital Transistor (BRT), 10000-REEL Product overview: NSVMUN5111DW1T3G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-NSVMUN5111DW1T3G
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Win Source Part Number: 957784-NSVMUN5111DW1
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 10,000
Mounting: SMD (SMT)
Power - Max: 250mW
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Alternative Parts (Cross-Reference): DTC123JKAT146; IMH11AT110; DTC114EUAT106; DDTC143ECA-7-FNSVMUN
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: onsemi
Other Names: 2156-NSVMUN5111DW1T3
Base Product Number: NSVMUN5111
TRANS, AEC-Q101, DUAL PNP, -50V, SOT-363; Digital Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-50V; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; ResistorRoHS Compliant: Yes
TRANS PREBIAS 2PNP 50V SC88
TRANS PREBIAS 2PNP 50V SC88
Bipolar Transistors - Pre-Biased SS SC88 BR XSTR PNP 50V
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 293-NSVMUN5111DW1T3G | 488-NSVMUN5111DW1T3GDKR-ND | 957784-NSVMUN5111DW1T3G | 13AC3872 | NSVMUN5111DW1T3G | NSVMUN5111DW1T3G | NSVMUN5111DW1T3G |
| Product Name | Dual Bipolar Transistor | Bipolar Transistor Arrays, Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased | Trans, Aec-Q101, Dual Pnp, -50V, Sot-363; Digital Transistor Polarity Onsemi | Bipolar Transistor Arrays, Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistors - Pre-Biased |
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | 100 milliamps | |||
| VCEO | 50 volts | 50 volts | 50 volts | ||||
| PD | 250 milliwatts | ||||||
| Polarity | PNP | PNP | PNP | 2 PNP - Pre-Biased (Dual); PNP | |||
| Package Type | 6-TSSOP, SC-88, SOT-363 | SOT3 | TO-3; SOT3 | 6-TSSOP, SC-88, SOT-363 | SC-88/SC70-6/SOT-363 |
