TRANS PREBIAS NPN 0.246W SOT23
Manufacturer: onsemi
Win Source Part Number: 1325066-NSVMMUN2233L
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 10,000
Mounting: Surface Mount
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Case / Package: TO-236-3, SC-59, SOT-23-3
ECCN: EAR99
Fake Threat In the Open Market: 78
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Other Part Number: NSVMMUN2233LT3G-ND,4
Base Product Number: NSVMMUN2233
RoHS Status: ROHS3 Compliant
NPN Bipolar Digital Transistor (BRT), 10000-REEL Product overview: NSVMMUN2233LT3G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-NSVMMUN2233LT3G can be used for catalog matching and distributor lookup.
TRANS PREBIAS NPN 50V SOT23-3
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
TRANS PREBIAS NPN 50V SOT23-3
NPN Bipolar Digital Transistor (BRT)
TRANS PREBIAS NPN 50V SOT23-3
Bipolar Transistors - BJT SS SOT23 BR XSTR NPN
RF TRANSISTOR, NPN, 50V, 0.1A, SOT-23; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:47kohm RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | RF Transistors |
| Product Number | NSVMMUN2233LT3G | 1325066-NSVMMUN2233LT3G | 292-NSVMMUN2233LT3G | 488-NSVMMUN2233LT3GDKR-ND | NSVMMUN2233LT3G | NSVMMUN2233LT3G | NSVMMUN2233LT3G | 45Y1533 |
| Product Name | Single, Pre-Biased Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased | Bipolar Transistor | Single, Pre-Biased Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistors - BJT | Rf Transistor, Npn, 50V, 0.1A, Sot-23; Digital Transistor Polarity Onsemi | |
| Polarity | NPN - Pre-Biased; NPN | NPN | NPN | NPN | NPN | |||
| Package Type | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P | TO-3; SOT23 | |||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | |||||
| VCEO | 50 volts | 50 volts | ||||||
| Output Power | 0.2460 watts | 0.2460 watts |
