onsemi SOT-23 Bipolar Transistor NSVMMUN2217LT1G

Description
NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL Product overview: NSVMMUN2217LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, SOT-23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-NSVMMUN2217LT1G can be used for catalog matching and distributor lookup.
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Description
NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL Product overview: NSVMMUN2217LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, SOT-23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-NSVMMUN2217LT1G can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
SOT-23 Bipolar Transistor
292-NSVMMUN2217LT1G
SOT-23 Bipolar Transistor 292-NSVMMUN2217LT1G
NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL Product overview: NSVMMUN2217LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, SOT-23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-NSVMMUN2217LT1G can be used for catalog matching and distributor lookup.

NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL Product overview: NSVMMUN2217LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, SOT-23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-NSVMMUN2217LT1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - 1325676-NSVMMUN2217LT1G - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased
1325676-NSVMMUN2217LT1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased 1325676-NSVMMUN2217LT1G
Manufacturer: onsemi Win Source Part Number: 1325676-NSVMMUN2217L T1G Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Packaging: Reel - TR Standard Package: 3,000 Mounting: Surface Mount Power - Max: 246 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Case / Package: TO-236-3, SC-59, SOT-23-3 ECCN: EAR99 Fake Threat In the Open Market: 66 MSL Level: 1 (Unlimited) Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Base Product Number: NSVMMUN2217 RoHS Status: ROHS3 Compliant

Manufacturer: onsemi
Win Source Part Number: 1325676-NSVMMUN2217LT1G
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Case / Package: TO-236-3, SC-59, SOT-23-3
ECCN: EAR99
Fake Threat In the Open Market: 66
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Base Product Number: NSVMMUN2217
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 488-NSVMMUN2217LT1GTR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
488-NSVMMUN2217LT1GTR-ND
Single, Pre-Biased Bipolar Transistors 488-NSVMMUN2217LT1GTR-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 488-NSVMMUN2217LT1GDKR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
488-NSVMMUN2217LT1GDKR-ND
Single, Pre-Biased Bipolar Transistors 488-NSVMMUN2217LT1GDKR-ND
TRANS PREBIAS NPN 50V SOT23-3

TRANS PREBIAS NPN 50V SOT23-3

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 488-NSVMMUN2217LT1GCT-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
488-NSVMMUN2217LT1GCT-ND
Single, Pre-Biased Bipolar Transistors 488-NSVMMUN2217LT1GCT-ND
TRANS PREBIAS NPN 50V SOT23-3

TRANS PREBIAS NPN 50V SOT23-3

Buy Now Datasheet
Npn Bipolar Digital Transistor (Brt) / Reel Onsemi - 28X8063 - Newark, An Avnet Company
Chicago, IL, United States
Npn Bipolar Digital Transistor (Brt) / Reel Onsemi
28X8063
Npn Bipolar Digital Transistor (Brt) / Reel Onsemi 28X8063
NPN Bipolar Digital Transistor (BRT) / REEL

NPN Bipolar Digital Transistor (BRT) / REEL

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NSVMMUN2217LT1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
NSVMMUN2217LT1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) NSVMMUN2217LT1G
TRANS PREBIAS NPN 50V SOT23-3

TRANS PREBIAS NPN 50V SOT23-3

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 292-NSVMMUN2217LT1G 1325676-NSVMMUN2217LT1G 488-NSVMMUN2217LT1GTR-ND 28X8063 NSVMMUN2217LT1G
Product Name SOT-23 Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Single, Pre-Biased Bipolar Transistors Npn Bipolar Digital Transistor (Brt) / Reel Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT)
IC(max) 100 milliamps 100 milliamps 100 milliamps
VCEO 50 volts 50 volts
PD 246 milliwatts
TJ -55 C (-67 F)
Polarity NPN NPN NPN
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