Manufacturer: onsemi
Win Source Part Number: 1325676-NSVMMUN2217L
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Case / Package: TO-236-3, SC-59, SOT-23-3
ECCN: EAR99
Fake Threat In the Open Market: 66
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Base Product Number: NSVMMUN2217
RoHS Status: ROHS3 Compliant
NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL Product overview: NSVMMUN2217LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, SOT-23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-NSVMMUN2217LT1G can be used for catalog matching and distributor lookup.
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
TRANS PREBIAS NPN 50V SOT23-3
TRANS PREBIAS NPN 50V SOT23-3
TRANS PREBIAS NPN 50V SOT23-3
NPN Bipolar Digital Transistor (BRT) / REEL
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 1325676-NSVMMUN2217LT1G | 292-NSVMMUN2217LT1G | 488-NSVMMUN2217LT1GTR-ND | NSVMMUN2217LT1G | 28X8063 |
| Product Name | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased | SOT-23 Bipolar Transistor | Single, Pre-Biased Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Npn Bipolar Digital Transistor (Brt) / Reel Onsemi |
| Polarity | NPN | NPN | NPN | ||
| Package Type | SOT3; SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3 | |
| Packing Method | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | ||
| Power Gain | 35 dB |
