Win Source Part Number: 1187469-NSVMMUN2133L
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: onsemi
Other Names: NSVMMUN2133LT1G-ND,N
Base Product Number: NSVMMUN2133
PNP Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL Product overview: NSVMMUN2133LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, SOT-23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-NSVMMUN2133LT1G can be used for catalog matching and distributor lookup.
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
TRANS PREBIAS PNP 50V SOT23-3
DIGITAL TRANSISTOR, 50V, 0.1A ROHS COMPLIANT: YES
PNP Bipolar Digital Transistor (BRT) / REEL
TRANS PREBIAS PNP 0.246W SOT23
Bipolar Transistors - Pre-Biased SS SOT23 BR XSTR PNP 50V
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 1187469-NSVMMUN2133LT1G | 292-NSVMMUN2133LT1G | NSVMMUN2133LT1GOSTR-ND | NSVMMUN2133LT1G | 54AH9482 | 28X8062 | NSVMMUN2133LT1G | NSVMMUN2133LT1G |
| Product Name | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased | SOT-23 Bipolar Transistor | Single, Pre-Biased Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Digital Transistor, 50V, 0.1A Rohs Compliant Onsemi | Pnp Bipolar Digital Transistor (Brt) / Reel Onsemi | Single, Pre-Biased Bipolar Transistors | Bipolar Transistors - Pre-Biased |
| Polarity | PNP | PNP | PNP | PNP - Pre-Biased; PNP | ||||
| Package Type | SOT3; SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3 | TO-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | |||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | 100 milliamps | ||||
| Power Gain | 80 dB | |||||||
| Output Power | 0.2460 watts | 0.2460 watts |
