onsemi Single, Pre-Biased Bipolar Transistors NSVMMUN2130LT1G

The NSVMMUN2130LT1G is a PNP digital transistor with integrated bias resistors, designed to replace discrete transistor and resistor networks, reducing component count and board space. It is housed in an SOT-23 package measuring 2.90 mm × 1.30 mm × 1.00 mm. The device has a collector-emitter voltage rating of 50 V, continuous collector current of 100 mA, and operates over a junction temperature range of -55°C to +150°C. It meets AEC-Q101 qualification and is RoHS compliant. Thermal resistance from junction to ambient is 508 °C/W on a minimum pad, with total power dissipation of 246 mW at 25°C. The input resistor ratio is 1.0, and it provides a collector-emitter saturation voltage of 0.25 V max at 10 mA collector current.