High Voltage NPN Bipolar Transistor, 8000-REEL Product overview: NSVMMBT5551M3T5G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NSVMMBT5551M3T5G
Win Source Part Number: 1123734-NSVMMBT5551M
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Bulk
Standard Package: 1
Mounting: SMD (SMT)
Power - Max: 265 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 60 mA
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Package / Case: SOT-723
Supplier Device Package: SOT-723
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 46 pct.
MSL Level: Vendor Undefined
REACH Status: REACH Unaffected
Mfr: onsemi
Other Names: 2156-NSVMMBT5551M3T5
Bipolar (BJT) Transistor NPN 160V 60mA 265mW Surface Mount SOT-723
TRANS NPN 160V 0.06A SOT-723
TRANS NPN 160V 0.06A SOT-723
TRANS NPN 160V 0.06A SOT723
Bipolar Transistors - BJT SOT-723 GP NPN TRANS
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 276-NSVMMBT5551M3T5G | 1123734-NSVMMBT5551M3T5G | 488-NSVMMBT5551M3T5GTR-ND | NSVMMBT5551M3T5G | NSVMMBT5551M3T5G |
| Product Name | Bipolar Transistor | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistors - BJT |
| Polarity | NPN | NPN | |||
| Package Type | SOT3 | SOT-723 | AEC-Q101 | ||
| IC(max) | 60 milliamps | 60 milliamps | |||
| Power Gain | 80 dB | ||||
| Output Power | 0.2650 watts |
