Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
Dual PNP Bipolar Transistor, 4000-REEL Product overview: NSVEMT1DXV6T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-NSVEMT1DXV6T1G can be used for catalog matching and distributor lookup.
Win Source Part Number: 1355557-NSVEMT1DXV6T
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 41 pct.
MSL Level: 1 (Unlimited)
Mfr: onsemi
Package: Tape & Reel
Product Status: Active
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
Base Product Number: NSVEMT1
Mounting Type: Surface Mount
HTSUS: 8541.21.0075
REACH Status: REACH Unaffected
ECCN: EAR99
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 60V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500pA (ICBO)
Frequency - Transition: 140MHz
Power - Max: 500mW
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 100mA 140MHz 500mW Surface Mount SOT-563
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 100mA 140MHz 500mW Surface Mount SOT-563
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 100mA 140MHz 500mW Surface Mount SOT-563
Bipolar Transistors - BJT SS DUAL PURPOSE TRAN
TRANS 2PNP 60V 0.1A SOT563
TRANS ARRAY, DUAL PNP, 60V, 0.1A, SOT563; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:60V; DC Collector Current:100mA; Power Dissipation Pd:500mW; DC Current Gain hFE:120hFE; No. of Pins:6Pins RoHS Compliant: Yes
| Rochester Electronics | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors |
| Product Number | NSVEMT1DXV6T1G | 277-NSVEMT1DXV6T1G | 1355557-NSVEMT1DXV6T1G | 488-NSVEMT1DXV6T1GCT-ND | NSVEMT1DXV6T1G | NSVEMT1DXV6T1G | 45Y1528 |
| Product Name | Dual Bipolar Transistor | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays | Bipolar Transistor Arrays | Bipolar Transistors - BJT | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Trans Array, Dual Pnp, 60V, 0.1A, Sot563; Transistor Polarity Onsemi | |
| Polarity | PNP | PNP | PNP | PNP | |||
| Package Type | SOT-5X3-EUT-CPR | SOT3 | SOT-563, SOT-666 | TO-3 | |||
| Packing Method | Tape Reel; Tape & Reel | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| IC(max) | 100 milliamps | 100 milliamps |
