onsemi Bipolar Transistor NSVDTC123JM3T5G

NPN Bipolar Digital Transistor (BRT)

NPN Bipolar Digital Transistor (BRT), 8000-REEL Product overview: NSVDTC123JM3T5G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-NSVDTC123JM3T5G can be used for catalog matching and distributor lookup.

TRANS PREBIAS NPN 50V SOT723

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 260mW Surface Mount SOT-723

TRANS PREBIAS NPN 50V SOT723

Win Source Part Number: 1377053-NSVDTC123JM3T5G
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Fake Threat In the Open Market: 38 pct.
MSL Level: 1 (Unlimited)
Mfr: onsemi
Series: Automotive, AEC-Q101
Package: Tape & Reel
Product Status: Active
Package / Case: SOT-723
Supplier Device Package: SOT-723
Base Product Number: NSVDTC123
Mounting Type: Surface Mount
HTSUS: 8541.21.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 260 mW