onsemi Single Bipolar Transistors NSVBSS63LT1G

The NSVBSS63LT1G is a PNP bipolar junction transistor (BJT) designed for high voltage applications, with a collector-emitter voltage rating of -100 V and a maximum collector current of -100 mA. It is AEC-Q101 qualified, making it suitable for automotive and other applications that require stringent quality standards. The device is packaged in a compact SOT-23 (TO-236) form factor, facilitating surface mount assembly. This transistor operates effectively within a temperature range of -55¬8C to +150¬8C, ensuring reliability in various environmental conditions. It features low collector-emitter saturation voltage and a DC current gain of 30 to 95 MHz, which is beneficial for signal amplification applications. The device is also Pb-free, halogen-free, and RoHS compliant, aligning with modern environmental standards. Engineers considering this transistor should note its limited supply status and the estimated production lead time of 51 weeks. The product is available in quantities of 3000 per reel, making it suitable for high-volume applications.