onsemi Single Bipolar Transistors NSVBCP5316MTWG

The NSVBCP5316MTWG is a PNP bipolar transistor designed for general-purpose amplifier applications in automotive and high-reliability systems. It is housed in a WDFNW3 (CASE 515AA) surface-mount package measuring 2×2 mm. It has a maximum collector-emitter voltage of -80 V, continuous collector current of 1.0 A, and peak collector current of 2.0 A. Power dissipation is 1.5 W with a 600 mm² PCB pad. The device meets AEC-Q101 qualifications and is RoHS compliant, Pb-free, and halogen-free. It features a DC current gain (hFE) minimum of 100 at IC = -150 mA and VCE = -2.0 V, and a collector-emitter saturation voltage of -0.50 V at IC = -500 mA. Transition frequency is 130 MHz.