onsemi 40 V 5.0 A Bipolar Transistor NSV40501UW3T2G

Low VCE(sat) Transistor, NPN, 40 V, 5.0 A, 3 Lead WDFN, 2 x 2 x 0.75 mm, 1.3 mm Pitch, 3000-REEL Product overview: NSV40501UW3T2G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40 V, 5.0 A. Search-friendly keywords include transistor, BJT, switching, amplification, 40 V, 5.0 A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NSV40501UW3T2G can be used for catalog matching and distributor lookup.

Bipolar (BJT) Transistor NPN 40V 5A 150MHz 875mW Surface Mount 3-WDFN (2x2)

TRANS NPN 40V 5A 3WDFN

Manufacturer: onsemi
Win Source Part Number: 1325089-NSV40501UW3T2G
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
Power - Max: 875 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 5 A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 150mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-WDFN (2x2)
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: 3-WDFN Exposed Pad
ECCN: EAR99
Fake Threat In the Open Market: 68
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Other Part Number: 1990-NSV40501UW3T2GTR,488-NSV40501UW3T2GTR,2156-NSV40501UW3T2G-488,NSV40501UW3T2G-ND
Base Product Number: NSV405
RoHS Status: ROHS3 Compliant