onsemi TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NSTB60BDW1T1G NSTB60BDW1T1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1083650-NSTB60BDW1T1 G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 140MHz Transistor Polarity: 1 NPN Pre-Biased, 1 PNP Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 150mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 5mA, 10V / 120 @ 5mA, 10V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1083650-NSTB60BDW1T1 G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 140MHz Transistor Polarity: 1 NPN Pre-Biased, 1 PNP Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 150mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 5mA, 10V / 120 @ 5mA, 10V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NSTB60BDW1T1G - 1083650-NSTB60BDW1T1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NSTB60BDW1T1G
1083650-NSTB60BDW1T1G
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NSTB60BDW1T1G 1083650-NSTB60BDW1T1G
Manufacturer: ON Semiconductor Win Source Part Number: 1083650-NSTB60BDW1T1 G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 140MHz Transistor Polarity: 1 NPN Pre-Biased, 1 PNP Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 150mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 5mA, 10V / 120 @ 5mA, 10V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1083650-NSTB60BDW1T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 140MHz
Transistor Polarity: 1 NPN Pre-Biased, 1 PNP
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SC-88/SC70-6/SOT-363
Maximum Current Collector: 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 5mA, 10V / 120 @ 5mA, 10V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 488-NSTB60BDW1T1GDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
488-NSTB60BDW1T1GDKR-ND
Bipolar Transistor Arrays, Pre-Biased 488-NSTB60BDW1T1GDKR-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V 150mA 140MHz 250mW Surface Mount SC-88/SC70-6/SOT-363

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V 150mA 140MHz 250mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 488-NSTB60BDW1T1GTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
488-NSTB60BDW1T1GTR-ND
Bipolar Transistor Arrays, Pre-Biased 488-NSTB60BDW1T1GTR-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V 150mA 140MHz 250mW Surface Mount SC-88/SC70-6/SOT-363

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V 150mA 140MHz 250mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 488-NSTB60BDW1T1GCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
488-NSTB60BDW1T1GCT-ND
Bipolar Transistor Arrays, Pre-Biased 488-NSTB60BDW1T1GCT-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V 150mA 140MHz 250mW Surface Mount SC-88/SC70-6/SOT-363

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V 150mA 140MHz 250mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
NSTB60BDW1T1G
Bipolar Transistors - Pre-Biased NSTB60BDW1T1G
Bipolar Transistors - Pre-Biased SS GP XSTR NPN

Bipolar Transistors - Pre-Biased SS GP XSTR NPN

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NSTB60BDW1T1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
NSTB60BDW1T1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) NSTB60BDW1T1G
TRANS PREBIAS 1NPN 1PNP 50V SC88

TRANS PREBIAS 1NPN 1PNP 50V SC88

Supplier's Site
Brt Transistor, 50V, 22Kohm, Sot363, Full Reel; Digital Transistor Polarity Onsemi - 83H7800 - Newark, An Avnet Company
Chicago, IL, United States
Brt Transistor, 50V, 22Kohm, Sot363, Full Reel; Digital Transistor Polarity Onsemi
83H7800
Brt Transistor, 50V, 22Kohm, Sot363, Full Reel; Digital Transistor Polarity Onsemi 83H7800
BRT TRANSISTOR, 50V, 22KOHM, SOT363, FULL REEL; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:150mA; Base Input Resistor R1:22kohm; No. of Pins:6 Pin RoHS Compliant: Yes

BRT TRANSISTOR, 50V, 22KOHM, SOT363, FULL REEL; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:150mA; Base Input Resistor R1:22kohm; No. of Pins:6 Pin RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors
Product Number 1083650-NSTB60BDW1T1G 488-NSTB60BDW1T1GDKR-ND NSTB60BDW1T1G NSTB60BDW1T1G 83H7800
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NSTB60BDW1T1G Bipolar Transistor Arrays, Pre-Biased Bipolar Transistors - Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT) Brt Transistor, 50V, 22Kohm, Sot363, Full Reel; Digital Transistor Polarity Onsemi
Polarity NPN; PNP; 1 NPN Pre-Biased, 1 PNP NPN; PNP
Package Type SOT3; SC-88/SC70-6/SOT-363 6-TSSOP, SC-88, SOT-363 TO-3
Packing Method Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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