BJT,PNP Matched Pair,65V,0.1A,SOT-36
BJT,PNP Matched Pair,65V,0.1A,SOT-36
BJT,PNP Matched Pair,65V,0.1A,SOT-36
Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363
Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363
Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363
TRANS 2PNP 65V 0.1A SC88
DUAL MATCHED PNP XSTR 65V, 3000-REEL Product overview: NST65010MW6T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 65V. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 65V, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-NST65010MW6T1G can be used for catalog matching and distributor lookup.
Manufacturer: onsemi
Win Source Part Number: 1325649-NST65010MW6T
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
Power - Max: 380mW
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: 6-TSSOP, SC-88, SOT-363
ECCN: EAR99
Fake Threat In the Open Market: 66
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Other Part Number: NST65010MW6T1GOSDKR,
Base Product Number: NST65010
RoHS Status: ROHS3 Compliant
TRANS, DUAL PNP, -65V, SOT-363-6; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-65V; DC Collector Current:-100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:0.9hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes
TRANS 2PNP 65V 0.1A SC88
Bipolar Transistors - BJT Dual Matched PNP Tra
| RS Components, Ltd. | RS Components, Ltd. | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 9209887 | 9209887P | NST65010MW6T1GOSTR-ND | NST65010MW6T1G | 277-NST65010MW6T1G | 1325649-NST65010MW6T1G | 75Y1885 | NST65010MW6T1G | NST65010MW6T1G |
| Product Name | Bipolar Transistors | Bipolar Transistors | Bipolar Transistor Arrays | Bipolar Transistor Arrays | Dual 65V Bipolar Transistor | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays | Trans, Dual Pnp, -65V, Sot-363-6; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistors - BJT |
| Polarity | PNP | PNP | PNP | 2 PNP (Dual); PNP | PNP | PNP | |||
| Package Type | Sot-363 (sc-88) | SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | SOT3; 6-TSSOP, SC-88, SOT-363 | TO-3; SOT3 | |||
| Number of units in IC | 2 | ||||||||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | ||||||
| VCEO | 65 volts | 65 volts |
