NPN BJT Transistor, 60V, 6A, 100MHz, SOT-223-4 Product overview: NSS60601MZ4T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 6A, 100MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 6A, 100MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NSS60601MZ4T1G can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor NPN 60V 6A 100MHz 800mW Surface Mount SOT-223 (TO-261)
Bipolar (BJT) Transistor NPN 60V 6A 100MHz 800mW Surface Mount SOT-223 (TO-261)
Bipolar (BJT) Transistor NPN 60V 6A 100MHz 800mW Surface Mount SOT-223 (TO-261)
Manufacturer: ON Semiconductor
Win Source Part Number: 1083646-NSS60601MZ4T
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Maximum Current Collector: 6A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 300mV @ 600mA, 6A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 120 @ 1A, 2V
Maximum Power Dissipation: 800mW
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Sufficient
TRANS NPN 60V 6A SOT223
Bipolar Transistors - BJT NPN 60V/6A LOW VCE(SAT)
BIPOLAR TRANSISTOR, NPN, 60V, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage Max:60V; Continuous Collector Current:6A; Power Dissipation:710mW; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Product Range:- RoHS Compliant: Yes
TRANSISTOR, BIPOL, NPN, 60V, SOT-223-4; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:100MHz; Power Dissipation Pd:710mW; DC Collector Current:6A; DC Current Gain hFE:50hFE; Transistor Case RoHS Compliant: Yes
TRANS, BIPOL, NPN, 60V, SOT223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:100MHz; Power Dissipation Pd:710mW; DC Collector Current:6A; DC Current Gain hFE:50hFE; Transistor Case RoHS Compliant: Yes
TRANS NPN 60V 6A SOT223
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors |
| Product Number | 276-NSS60601MZ4T1G | NSS60601MZ4T1GOSTR-ND | 1083646-NSS60601MZ4T1G | NSS60601MZ4T1G | NSS60601MZ4T1G | 75M5193 | 32AJ8429 | 03AJ2413 | NSS60601MZ4T1G |
| Product Name | 60V 6A 100MHz Bipolar Transistor | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - NSS60601MZ4T1G | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistors - BJT | Bipolar Transistor, Npn, 60V, Sot-223; Transistor Polarity Onsemi | Transistor, Bipol, Npn, 60V, Sot-223-4; Transistor Polarity Onsemi | Trans, Bipol, Npn, 60V, Sot223; Transistor Polarity Onsemi | Single Bipolar Transistors |
| Polarity | NPN | NPN | NPN; NPN | NPN | NPN | NPN | NPN; NPN | ||
| IC(max) | 6000 milliamps | 6000 milliamps | 6000 milliamps | 6000 milliamps | |||||
| VCEO | 60 volts | 60 volts | 60 volts | 60 volts | |||||
| VCBO | 100 volts | ||||||||
| fT | 100 MHz |
