onsemi TRANSISTORS - Transistors (BJT) - Arrays - NSS40302PDR2G NSS40302PDR2G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 045379-NSS40302PDR2G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN, PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 115mV @ 200mA, 2A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 180 @ 1A, 2V Maximum Power Dissipation: 653mW Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 045379-NSS40302PDR2G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN, PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 115mV @ 200mA, 2A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 180 @ 1A, 2V Maximum Power Dissipation: 653mW Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors (BJT) - Arrays - NSS40302PDR2G - 045379-NSS40302PDR2G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - NSS40302PDR2G
045379-NSS40302PDR2G
TRANSISTORS - Transistors (BJT) - Arrays - NSS40302PDR2G 045379-NSS40302PDR2G
Manufacturer: ON Semiconductor Win Source Part Number: 045379-NSS40302PDR2G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN, PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 115mV @ 200mA, 2A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 180 @ 1A, 2V Maximum Power Dissipation: 653mW Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 045379-NSS40302PDR2G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: NPN, PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 115mV @ 200mA, 2A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 180 @ 1A, 2V
Maximum Power Dissipation: 653mW
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Logic Level Translators
Product Number 045379-NSS40302PDR2G
Product Name TRANSISTORS - Transistors (BJT) - Arrays - NSS40302PDR2G
Operating Temperature -55 to 150 C (-67 to 302 F)
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