Low VCE(sat) Transistor, Dual NPN, 40 V, 3.0 A, SOIC-8 Narrow Body, 2500-REEL Product overview: NSS40301MDR2G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 40 V, 3.0 A, SOIC. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 40 V, 3.0 A, SOIC, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-NSS40301MDR2G can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 3A 100MHz 653mW Surface Mount 8-SOIC
Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 3A 100MHz 653mW Surface Mount 8-SOIC
Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 3A 100MHz 653mW Surface Mount 8-SOIC
Manufacturer: ON Semiconductor
Win Source Part Number: 060573-NSS40301MDR2G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: 2 NPN (Dual)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 115mV @ 200mA, 2A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 180 @ 1A, 2V
Maximum Power Dissipation: 653mW
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient
TRANS 2NPN 40V 3A 8SOIC
BIPOLAR ARRAY, DUAL NPN, 40V, 3A, SOIC ROHS COMPLIANT: YES
40V 653mW 180@1A,2V 3A 2 NPN SOIC-8 Bipolar Transistors - BJT ROHS
Bipolar Transistors - BJT MATCHED LO VCE(SAT) SOIC8
TRANS 2NPN 40V 3A 8SOIC
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 277-NSS40301MDR2G | NSS40301MDR2GOSTR-ND | 060573-NSS40301MDR2G | NSS40301MDR2G | 54AH9468 | NSS40301MDR2G | NSS40301MDR2G | NSS40301MDR2G |
| Product Name | Dual 40 V 3.0 A SOIC Bipolar Transistor | Bipolar Transistor Arrays | TRANSISTORS - Transistors (BJT) - Arrays - NSS40301MDR2G | Bipolar Transistor Arrays | Bipolar Array, Dual Npn, 40V, 3A, Soic Rohs Compliant Onsemi | Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT | Bipolar Transistors - BJT | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | NPN | NPN; 2 NPN (Dual) | 2 NPN (Dual); NPN | NPN | NPN | ||
| IC(max) | 3000 milliamps | 3000 milliamps | 3000 milliamps | 3000 milliamps | ||||
| VCEO | 40 volts | 40 volts | 40 volts | 40 volts | ||||
| VCBO | 40 volts | |||||||
| fT | 100 MHz | 100 MHz |
