onsemi TRANSISTORS - Transistors (BJT) - Arrays - NSS40300MDR2G NSS40300MDR2G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1083644-NSS40300MDR2 G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: 2 PNP (Dual) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 170mV @ 200mA, 2A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 180 @ 1A, 2V Maximum Power Dissipation: 653mW Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1083644-NSS40300MDR2 G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: 2 PNP (Dual) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 170mV @ 200mA, 2A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 180 @ 1A, 2V Maximum Power Dissipation: 653mW Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Arrays - NSS40300MDR2G - 1083644-NSS40300MDR2G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - NSS40300MDR2G
1083644-NSS40300MDR2G
TRANSISTORS - Transistors (BJT) - Arrays - NSS40300MDR2G 1083644-NSS40300MDR2G
Manufacturer: ON Semiconductor Win Source Part Number: 1083644-NSS40300MDR2 G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: 2 PNP (Dual) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 170mV @ 200mA, 2A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 180 @ 1A, 2V Maximum Power Dissipation: 653mW Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1083644-NSS40300MDR2G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: 2 PNP (Dual)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 170mV @ 200mA, 2A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 180 @ 1A, 2V
Maximum Power Dissipation: 653mW
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
Dual 40 V 3.0 A SOIC Bipolar Transistor
277-NSS40300MDR2G
Dual 40 V 3.0 A SOIC Bipolar Transistor 277-NSS40300MDR2G
Low VCE(sat) Transistor, Dual PNP, 40 V, 3.0 A, SOIC-8 Narrow Body, 2500-REEL Product overview: NSS40300MDR2G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 40 V, 3.0 A, SOIC. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 40 V, 3.0 A, SOIC, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-NSS40300MDR2G can be used for catalog matching and distributor lookup.

Low VCE(sat) Transistor, Dual PNP, 40 V, 3.0 A, SOIC-8 Narrow Body, 2500-REEL Product overview: NSS40300MDR2G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 40 V, 3.0 A, SOIC. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 40 V, 3.0 A, SOIC, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-NSS40300MDR2G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar Transistor Arrays - NSS40300MDR2GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
NSS40300MDR2GOSCT-ND
Bipolar Transistor Arrays NSS40300MDR2GOSCT-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 3A 100MHz 653mW Surface Mount 8-SOIC

Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 3A 100MHz 653mW Surface Mount 8-SOIC

Buy Now Datasheet
Bipolar Transistor Arrays - NSS40300MDR2GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
NSS40300MDR2GOSDKR-ND
Bipolar Transistor Arrays NSS40300MDR2GOSDKR-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 3A 100MHz 653mW Surface Mount 8-SOIC

Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 3A 100MHz 653mW Surface Mount 8-SOIC

Buy Now Datasheet
Bipolar Transistor Arrays - NSS40300MDR2GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
NSS40300MDR2GOSTR-ND
Bipolar Transistor Arrays NSS40300MDR2GOSTR-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 3A 100MHz 653mW Surface Mount 8-SOIC

Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 3A 100MHz 653mW Surface Mount 8-SOIC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NSS40300MDR2G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
NSS40300MDR2G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) NSS40300MDR2G
TRANS 2PNP 40V 3A 8SOIC

TRANS 2PNP 40V 3A 8SOIC

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
NSS40300MDR2G
Bipolar Transistors - BJT NSS40300MDR2G
Bipolar Transistors - BJT 40V 6A LOW VCE(SAT) DUAL PNP

Bipolar Transistors - BJT 40V 6A LOW VCE(SAT) DUAL PNP

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1083644-NSS40300MDR2G 277-NSS40300MDR2G NSS40300MDR2GOSCT-ND NSS40300MDR2G NSS40300MDR2G
Product Name TRANSISTORS - Transistors (BJT) - Arrays - NSS40300MDR2G Dual 40 V 3.0 A SOIC Bipolar Transistor Bipolar Transistor Arrays Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity PNP; 2 PNP (Dual) PNP PNP
Package Type SOT3; 8-SOIC "8-SOIC (0.154"", 3.90mm Width)"
IC(max) 3000 milliamps 3000 milliamps
VCEO 40 volts 40 volts
VCBO 40 volts
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