Manufacturer: ON Semiconductor
Win Source Part Number: 1232267-NSS40300DDR2
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: SMD
Power - Max: 653mW
Transistor Type: 2 PNP (Dual)
Frequency - Transition: 100MHz
Family Name: NSS40300DDR2G
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: 8-SOIC
Current - Collector (Ic) (Maximum): 3A
Voltage - Collector Emitter Breakdown (Maximum): 40V
Vce Saturation (Maximum) @ Ib, Ic: 170mV @ 200mA, 2A
Current - Collector Cutoff (Maximum): 100nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 180 @ 1A, 2V
Introduction Date: September 03, 2008
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2023
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 3A 100MHz 653mW Surface Mount 8-SOIC
Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 3A 100MHz 653mW Surface Mount 8-SOIC
Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 3A 100MHz 653mW Surface Mount 8-SOIC
Low VCE(sat) Transistor, Dual PNP, 40 V, 3.0 A, SOIC-8 Narrow Body, 2500-REEL Product overview: NSS40300DDR2G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 40 V, 3.0 A, SOIC. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 40 V, 3.0 A, SOIC, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-NSS40300DDR2G can be used for catalog matching and distributor lookup.
TRANS 2PNP 40V 3A 8SOIC
Bipolar Transistors - BJT DUAL 40V LOW VCE XTR PNP
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 1232267-NSS40300DDR2G | NSS40300DDR2GOSTR-ND | 277-NSS40300DDR2G | NSS40300DDR2G | NSS40300DDR2G |
| Product Name | TRANSISTORS - Transistors (BJT) - Arrays - NSS40300DDR2G | Bipolar Transistor Arrays | Dual 40 V 3.0 A SOIC Bipolar Transistor | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistors - BJT |
| Polarity | PNP | PNP | PNP | ||
| Package Type | SOT3 | "8-SOIC (0.154"", 3.90mm Width)" | |||
| Packing Method | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | |||
| Power Gain | 180 dB |
