onsemi Bipolar Transistor Arrays NSS40300DDR2G

Description
Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 3A 100MHz 653mW Surface Mount 8-SOIC
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 3A 100MHz 653mW Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar Transistor Arrays - NSS40300DDR2GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
NSS40300DDR2GOSTR-ND
Bipolar Transistor Arrays NSS40300DDR2GOSTR-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 3A 100MHz 653mW Surface Mount 8-SOIC

Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 3A 100MHz 653mW Surface Mount 8-SOIC

Buy Now Datasheet
Bipolar Transistor Arrays - NSS40300DDR2GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
NSS40300DDR2GOSCT-ND
Bipolar Transistor Arrays NSS40300DDR2GOSCT-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 3A 100MHz 653mW Surface Mount 8-SOIC

Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 3A 100MHz 653mW Surface Mount 8-SOIC

Buy Now Datasheet
Bipolar Transistor Arrays - NSS40300DDR2GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
NSS40300DDR2GOSDKR-ND
Bipolar Transistor Arrays NSS40300DDR2GOSDKR-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 3A 100MHz 653mW Surface Mount 8-SOIC

Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 3A 100MHz 653mW Surface Mount 8-SOIC

Buy Now Datasheet
Singapore
Dual 40 V 3.0 A SOIC Bipolar Transistor
277-NSS40300DDR2G
Dual 40 V 3.0 A SOIC Bipolar Transistor 277-NSS40300DDR2G
Low VCE(sat) Transistor, Dual PNP, 40 V, 3.0 A, SOIC-8 Narrow Body, 2500-REEL Product overview: NSS40300DDR2G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 40 V, 3.0 A, SOIC. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 40 V, 3.0 A, SOIC, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-NSS40300DDR2G can be used for catalog matching and distributor lookup.

Low VCE(sat) Transistor, Dual PNP, 40 V, 3.0 A, SOIC-8 Narrow Body, 2500-REEL Product overview: NSS40300DDR2G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 40 V, 3.0 A, SOIC. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 40 V, 3.0 A, SOIC, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-NSS40300DDR2G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays - NSS40300DDR2G - 1232267-NSS40300DDR2G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - NSS40300DDR2G
1232267-NSS40300DDR2G
TRANSISTORS - Transistors (BJT) - Arrays - NSS40300DDR2G 1232267-NSS40300DDR2G
Manufacturer: ON Semiconductor Win Source Part Number: 1232267-NSS40300DDR2 G Packaging: Reel - TR Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-SOIC (0.154", 3.90mm Width) Mounting: SMD Power - Max: 653mW Transistor Type: 2 PNP (Dual) Frequency - Transition: 100MHz Family Name: NSS40300DDR2G Categories: Discrete Semiconductor Products Manufacturer Homepage: www.onsemi.com Manufacturer Package: 8-SOIC Current - Collector (Ic) (Maximum): 3A Voltage - Collector Emitter Breakdown (Maximum): 40V Vce Saturation (Maximum) @ Ib, Ic: 170mV @ 200mA, 2A Current - Collector Cutoff (Maximum): 100nA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 180 @ 1A, 2V Introduction Date: September 03, 2008 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2023 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1232267-NSS40300DDR2G
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: SMD
Power - Max: 653mW
Transistor Type: 2 PNP (Dual)
Frequency - Transition: 100MHz
Family Name: NSS40300DDR2G
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: 8-SOIC
Current - Collector (Ic) (Maximum): 3A
Voltage - Collector Emitter Breakdown (Maximum): 40V
Vce Saturation (Maximum) @ Ib, Ic: 170mV @ 200mA, 2A
Current - Collector Cutoff (Maximum): 100nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 180 @ 1A, 2V
Introduction Date: September 03, 2008
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2023
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
NSS40300DDR2G
Bipolar Transistors - BJT NSS40300DDR2G
Bipolar Transistors - BJT DUAL 40V LOW VCE XTR PNP

Bipolar Transistors - BJT DUAL 40V LOW VCE XTR PNP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NSS40300DDR2G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
NSS40300DDR2G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) NSS40300DDR2G
TRANS 2PNP 40V 3A 8SOIC

TRANS 2PNP 40V 3A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number NSS40300DDR2GOSTR-ND 277-NSS40300DDR2G 1232267-NSS40300DDR2G NSS40300DDR2G NSS40300DDR2G
Product Name Bipolar Transistor Arrays Dual 40 V 3.0 A SOIC Bipolar Transistor TRANSISTORS - Transistors (BJT) - Arrays - NSS40300DDR2G Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3
IC(max) 3000 milliamps 3000 milliamps
VCEO 40 volts 40 volts
VCBO -40 volts
Unlock Full Specs
to access all available technical data