3 A, 100 V Low VCE(sat) NPN Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL Product overview: NSS1C301ET4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3 A, 100 V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 3 A, 100 V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NSS1C301ET4G can be used for catalog matching and distributor lookup.
TRANS NPN 100V 3A DPAK
Bipolar (BJT) Transistor NPN 100V 3A 120MHz 2.1W Surface Mount DPAK
Bipolar (BJT) Transistor NPN 100V 3A 120MHz 2.1W Surface Mount DPAK
Bipolar (BJT) Transistor NPN 100V 3A 120MHz 2.1W Surface Mount DPAK
Manufacturer: ON Semiconductor
Win Source Part Number: 806050-NSS1C301ET4G
Packaging: Reel
Mounting Style: SMD
Power - Max: 2.1W
Transistor Type: NPN
Frequency - Transition: 120MHz
Supplier Device Package: DPAK
Temperature Range - Operating: -65°C ~ 150°C
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Maximum): 3A
Voltage - Collector Emitter Breakdown (Maximum): 100V
Current - Collector Cutoff (Maximum): 100nA (ICBO)
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 250mV at 300mA, 3A
DC Current Gain (hFE) (Min) at Ic, Vce: 120 at 1A, 2V
TRANSISTOR, NPN, 100V, 3A, TO-252; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:120MHz; Power Dissipation Pd:33W; DC Collector Current:3A; DC Current Gain hFE:80hFE; Transistor Case RoHS Compliant: Yes
TRANS NPN 100V 3A DPAK
Bipolar Transistors - BJT BIPOLAR XTSR 3A/100V
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 276-NSS1C301ET4G | NSS1C301ET4G | NSS1C301ET4GOSDKR-ND | 806050-NSS1C301ET4G | 14AC4756 | NSS1C301ET4G | NSS1C301ET4G |
| Product Name | 3 A 100 V DPAK Bipolar Transistor | Single Bipolar Transistors | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - NSS1C301ET4G | Transistor, Npn, 100V, 3A, To-252; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistors - BJT |
| Polarity | NPN | NPN; NPN | NPN | NPN | NPN | ||
| IC(max) | 3000 milliamps | 3000 milliamps | 3000 milliamps | ||||
| VCEO | 100 volts | 100 volts | 100 volts | ||||
| VCBO | 140 volts | ||||||
| fT | 120 MHz |
