onsemi TRANSISTORS - Transistors (BJT) - Single - NSS1C301ET4G NSS1C301ET4G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 806050-NSS1C301ET4G Packaging: Reel Mounting Style: SMD Power - Max: 2.1W Transistor Type: NPN Frequency - Transition: 120MHz Supplier Device Package: DPAK Temperature Range - Operating: -65°C ~ 150°C Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Current - Collector (Ic) (Maximum): 3A Voltage - Collector Emitter Breakdown (Maximum): 100V Current - Collector Cutoff (Maximum): 100nA (ICBO) Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 2,500 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 250mV at 300mA, 3A DC Current Gain (hFE) (Min) at Ic, Vce: 120 at 1A, 2V
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 806050-NSS1C301ET4G Packaging: Reel Mounting Style: SMD Power - Max: 2.1W Transistor Type: NPN Frequency - Transition: 120MHz Supplier Device Package: DPAK Temperature Range - Operating: -65°C ~ 150°C Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Current - Collector (Ic) (Maximum): 3A Voltage - Collector Emitter Breakdown (Maximum): 100V Current - Collector Cutoff (Maximum): 100nA (ICBO) Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 2,500 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 250mV at 300mA, 3A DC Current Gain (hFE) (Min) at Ic, Vce: 120 at 1A, 2V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - NSS1C301ET4G - 806050-NSS1C301ET4G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - NSS1C301ET4G
806050-NSS1C301ET4G
TRANSISTORS - Transistors (BJT) - Single - NSS1C301ET4G 806050-NSS1C301ET4G
Manufacturer: ON Semiconductor Win Source Part Number: 806050-NSS1C301ET4G Packaging: Reel Mounting Style: SMD Power - Max: 2.1W Transistor Type: NPN Frequency - Transition: 120MHz Supplier Device Package: DPAK Temperature Range - Operating: -65°C ~ 150°C Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Current - Collector (Ic) (Maximum): 3A Voltage - Collector Emitter Breakdown (Maximum): 100V Current - Collector Cutoff (Maximum): 100nA (ICBO) Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 2,500 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 250mV at 300mA, 3A DC Current Gain (hFE) (Min) at Ic, Vce: 120 at 1A, 2V

Manufacturer: ON Semiconductor
Win Source Part Number: 806050-NSS1C301ET4G
Packaging: Reel
Mounting Style: SMD
Power - Max: 2.1W
Transistor Type: NPN
Frequency - Transition: 120MHz
Supplier Device Package: DPAK
Temperature Range - Operating: -65°C ~ 150°C
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Maximum): 3A
Voltage - Collector Emitter Breakdown (Maximum): 100V
Current - Collector Cutoff (Maximum): 100nA (ICBO)
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 250mV at 300mA, 3A
DC Current Gain (hFE) (Min) at Ic, Vce: 120 at 1A, 2V

Buy Now
Single Bipolar Transistors - NSS1C301ET4GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
NSS1C301ET4GOSDKR-ND
Single Bipolar Transistors NSS1C301ET4GOSDKR-ND
Bipolar (BJT) Transistor NPN 100V 3A 120MHz 2.1W Surface Mount DPAK

Bipolar (BJT) Transistor NPN 100V 3A 120MHz 2.1W Surface Mount DPAK

Buy Now Datasheet
Single Bipolar Transistors - NSS1C301ET4GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
NSS1C301ET4GOSCT-ND
Single Bipolar Transistors NSS1C301ET4GOSCT-ND
Bipolar (BJT) Transistor NPN 100V 3A 120MHz 2.1W Surface Mount DPAK

Bipolar (BJT) Transistor NPN 100V 3A 120MHz 2.1W Surface Mount DPAK

Buy Now Datasheet
Single Bipolar Transistors - NSS1C301ET4GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
NSS1C301ET4GOSTR-ND
Single Bipolar Transistors NSS1C301ET4GOSTR-ND
Bipolar (BJT) Transistor NPN 100V 3A 120MHz 2.1W Surface Mount DPAK

Bipolar (BJT) Transistor NPN 100V 3A 120MHz 2.1W Surface Mount DPAK

Buy Now Datasheet
Singapore
3 A 100 V DPAK Bipolar Transistor
276-NSS1C301ET4G
3 A 100 V DPAK Bipolar Transistor 276-NSS1C301ET4G
3 A, 100 V Low VCE(sat) NPN Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL Product overview: NSS1C301ET4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3 A, 100 V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 3 A, 100 V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NSS1C301ET4G can be used for catalog matching and distributor lookup.

3 A, 100 V Low VCE(sat) NPN Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL Product overview: NSS1C301ET4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3 A, 100 V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 3 A, 100 V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NSS1C301ET4G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - NSS1C301ET4G - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
NSS1C301ET4G
Single Bipolar Transistors NSS1C301ET4G
TRANS NPN 100V 3A DPAK

TRANS NPN 100V 3A DPAK

Supplier's Site Datasheet
Transistor, Npn, 100V, 3A, To-252; Transistor Polarity Onsemi - 14AC4756 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Npn, 100V, 3A, To-252; Transistor Polarity Onsemi
14AC4756
Transistor, Npn, 100V, 3A, To-252; Transistor Polarity Onsemi 14AC4756
TRANSISTOR, NPN, 100V, 3A, TO-252; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:120MHz; Power Dissipation Pd:33W; DC Collector Current:3A; DC Current Gain hFE:80hFE; Transistor Case RoHS Compliant: Yes

TRANSISTOR, NPN, 100V, 3A, TO-252; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:120MHz; Power Dissipation Pd:33W; DC Collector Current:3A; DC Current Gain hFE:80hFE; Transistor Case RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NSS1C301ET4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
NSS1C301ET4G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) NSS1C301ET4G
TRANS NPN 100V 3A DPAK

TRANS NPN 100V 3A DPAK

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
NSS1C301ET4G
Bipolar Transistors - BJT NSS1C301ET4G
Bipolar Transistors - BJT BIPOLAR XTSR 3A/100V

Bipolar Transistors - BJT BIPOLAR XTSR 3A/100V

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 806050-NSS1C301ET4G NSS1C301ET4GOSDKR-ND 276-NSS1C301ET4G NSS1C301ET4G 14AC4756 NSS1C301ET4G NSS1C301ET4G
Product Name TRANSISTORS - Transistors (BJT) - Single - NSS1C301ET4G Single Bipolar Transistors 3 A 100 V DPAK Bipolar Transistor Single Bipolar Transistors Transistor, Npn, 100V, 3A, To-252; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity NPN NPN NPN NPN; NPN NPN
Package Type SOT3; TO-252 (DPAK) TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3; TO-252 (DPAK)
Packing Method Tape Reel; Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
TJ -65 to 150 C (-85 to 302 F) -65 C (-85 F) -65 to 150 C (-85 to 302 F)
Power Gain 120 dB
Unlock Full Specs
to access all available technical data