onsemi TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NSBC144EPDP6T5G NSBC144EPDP6T5G

Manufacturer: ON Semiconductor Win Source Part Number: 790826-NSBC144EPDP6T 5G Packaging: Reel package Package: SOT-963 Mounting: SMD Power - Max: 339mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Family Name: NSBC144EPDP6 Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Manufacturer Package: SOT-963 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 50V Vce Saturation (Maximum) @ Ib, Ic: 250mV @ 300μA, 10mA Current - Collector Cutoff (Maximum): 500nA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 80 @ 5mA, 10V Alternative Parts (Cross-Reference): DMG564H3; DMG564H30R; DMG564030R; Introduction Date: July 14, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited