onsemi Bipolar Transistor Arrays, Pre-Biased NSBC114EPDXV6T1G

Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
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Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
Request a Quote
Datasheet
Datasheet Summary
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The BRT Transistor (part number 42K2321) is a digital transistor featuring both NPN and PNP configurations, designed to simplify circuit design by integrating a monolithic bias resistor network. It operates with a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The input resistor values are 10kOc for both the series base resistor and the base-emitter resistor, which helps reduce component count and board space. This device is housed in a SOT-563 package and is RoHS compliant, making it suitable for various applications, including automotive, as it meets AEC-Q101 qualification standards. The transistor's thermal characteristics indicate a maximum junction temperature range of -55¬8C to +150¬8C, ensuring reliability in diverse operating conditions.

Datasheet Summary
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The BRT Transistor (part number 42K2321) is a digital transistor featuring both NPN and PNP configurations, designed to simplify circuit design by integrating a monolithic bias resistor network. It operates with a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The input resistor values are 10kOc for both the series base resistor and the base-emitter resistor, which helps reduce component count and board space. This device is housed in a SOT-563 package and is RoHS compliant, making it suitable for various applications, including automotive, as it meets AEC-Q101 qualification standards. The transistor's thermal characteristics indicate a maximum junction temperature range of -55¬8C to +150¬8C, ensuring reliability in diverse operating conditions.

Suppliers

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Product
Description
Supplier Links
Bipolar Transistor Arrays, Pre-Biased - NSBC114EPDXV6T1GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
NSBC114EPDXV6T1GOSCT-ND
Bipolar Transistor Arrays, Pre-Biased NSBC114EPDXV6T1GOSCT-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563

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Bipolar Transistor Arrays, Pre-Biased - NSBC114EPDXV6T1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
NSBC114EPDXV6T1GOSTR-ND
Bipolar Transistor Arrays, Pre-Biased NSBC114EPDXV6T1GOSTR-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563

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Bipolar Transistor Arrays, Pre-Biased - NSBC114EPDXV6T1GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
NSBC114EPDXV6T1GOSDKR-ND
Bipolar Transistor Arrays, Pre-Biased NSBC114EPDXV6T1GOSDKR-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563

Buy Now Datasheet
 - NSBC114EPDXV6T1G - Rochester Electronics
Newburyport, MA, United States
Complementary Bipolar Digital Transistor (BRT)

Complementary Bipolar Digital Transistor (BRT)

Supplier's Site Datasheet
Singapore, Singapore
50V 100mA Bipolar Transistor
293-NSBC114EPDXV6T1G
50V 100mA Bipolar Transistor 293-NSBC114EPDXV6T1G
50V 100mA Complementary BJT Transistor, SOT-563 Product overview: NSBC114EPDXV6T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-NSBC114EPDXV6T1G can be used for catalog matching and distributor lookup.

50V 100mA Complementary BJT Transistor, SOT-563 Product overview: NSBC114EPDXV6T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-NSBC114EPDXV6T1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NSBC114EPDXV6T1G - 025689-NSBC114EPDXV6T1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NSBC114EPDXV6T1G
025689-NSBC114EPDXV6T1G
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NSBC114EPDXV6T1G 025689-NSBC114EPDXV6T1G
Manufacturer: ON Semiconductor Win Source Part Number: 025689-NSBC114EPDXV6 T1G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: SOT-563 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 35 @ 5mA, 10V Maximum Power Dissipation: 500mW Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 025689-NSBC114EPDXV6T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-563
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 35 @ 5mA, 10V
Maximum Power Dissipation: 500mW
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - NSBC114EPDXV6T1G - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays, Pre-Biased
NSBC114EPDXV6T1G
Bipolar Transistor Arrays, Pre-Biased NSBC114EPDXV6T1G
TRANS PREBIAS NPN/PNP 50V SOT563

TRANS PREBIAS NPN/PNP 50V SOT563

Supplier's Site Datasheet
TRANS PREBIAS NPN/PNP SOT563 - 598-NSBC114EPDXV6T1G - Utmel Electronic Limited
Hong Kong, China
TRANS PREBIAS NPN/PNP SOT563
598-NSBC114EPDXV6T1G
TRANS PREBIAS NPN/PNP SOT563 598-NSBC114EPDXV6T1G
TRANS PREBIAS NPN/PNP SOT563

TRANS PREBIAS NPN/PNP SOT563

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
NSBC114EPDXV6T1G
Bipolar Transistors - Pre-Biased NSBC114EPDXV6T1G
Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP

Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NSBC114EPDXV6T1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
NSBC114EPDXV6T1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) NSBC114EPDXV6T1G
TRANS PREBIAS NPN/PNP 50V SOT563

TRANS PREBIAS NPN/PNP 50V SOT563

Supplier's Site
Brt Transistor, 50V, 10K/10Kohm, Sot-563, Full Reel; Digital Transistor Polarity Onsemi - 42K2321 - Newark, An Avnet Company
Chicago, IL, United States
Brt Transistor, 50V, 10K/10Kohm, Sot-563, Full Reel; Digital Transistor Polarity Onsemi
42K2321
Brt Transistor, 50V, 10K/10Kohm, Sot-563, Full Reel; Digital Transistor Polarity Onsemi 42K2321
BRT TRANSISTOR, 50V, 10K/10KOHM, SOT-563, FULL REEL; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; No. of Pins:6 Pin RoHS Compliant: Yes

BRT TRANSISTOR, 50V, 10K/10KOHM, SOT-563, FULL REEL; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; No. of Pins:6 Pin RoHS Compliant: Yes

Supplier's Site Datasheet
Complementary Brt, 50V, 10Kohm, Sot-563 Rohs Compliant Onsemi - 65AH8876 - Newark, An Avnet Company
Chicago, IL, United States
Complementary Brt, 50V, 10Kohm, Sot-563 Rohs Compliant Onsemi
65AH8876
Complementary Brt, 50V, 10Kohm, Sot-563 Rohs Compliant Onsemi 65AH8876
COMPLEMENTARY BRT, 50V, 10KOHM, SOT-563 ROHS COMPLIANT: YES

COMPLEMENTARY BRT, 50V, 10KOHM, SOT-563 ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  DigiKey Rochester Electronics ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) Utmel Electronic Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Transistors
Product Number NSBC114EPDXV6T1GOSCT-ND NSBC114EPDXV6T1G 293-NSBC114EPDXV6T1G 025689-NSBC114EPDXV6T1G NSBC114EPDXV6T1G 598-NSBC114EPDXV6T1G NSBC114EPDXV6T1G NSBC114EPDXV6T1G 42K2321 65AH8876
Product Name Bipolar Transistor Arrays, Pre-Biased 50V 100mA Bipolar Transistor TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NSBC114EPDXV6T1G Bipolar Transistor Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT563 Bipolar Transistors - Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT) Brt Transistor, 50V, 10K/10Kohm, Sot-563, Full Reel; Digital Transistor Polarity Onsemi Complementary Brt, 50V, 10Kohm, Sot-563 Rohs Compliant Onsemi
Polarity NPN; PNP NPN; PNP NPN; PNP; 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual); NPN; PNP NPN; PNP; NPN, PNP Complementary
Package Type SOT-563, SOT-666 SOT-563, 6 LEAD SOT3; SOT-563 SOT-563, SOT-666 TO-3 TO-3
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 100 milliamps 100 milliamps 100 milliamps
VCEO 50 volts 50 volts 50 volts
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