The BRT Transistor (part number 42K2321) is a digital transistor featuring both NPN and PNP configurations, designed to simplify circuit design by integrating a monolithic bias resistor network. It operates with a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The input resistor values are 10kOc for both the series base resistor and the base-emitter resistor, which helps reduce component count and board space. This device is housed in a SOT-563 package and is RoHS compliant, making it suitable for various applications, including automotive, as it meets AEC-Q101 qualification standards. The transistor's thermal characteristics indicate a maximum junction temperature range of -55¬8C to +150¬8C, ensuring reliability in diverse operating conditions.
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
Manufacturer: ON Semiconductor
Win Source Part Number: 025689-NSBC114EPDXV6
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-563
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 35 @ 5mA, 10V
Maximum Power Dissipation: 500mW
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance
50V 100mA Complementary BJT Transistor, SOT-563 Product overview: NSBC114EPDXV6T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-NSBC114EPDXV6T1G
Complementary Bipolar Digital Transistor (BRT)
TRANS PREBIAS NPN/PNP 50V SOT563
Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP
TRANS PREBIAS NPN/PNP 50V SOT563
TRANS PREBIAS NPN/PNP SOT563
BRT TRANSISTOR, 50V, 10K/10KOHM, SOT-563, FULL REEL; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; No. of Pins:6 Pin RoHS Compliant: Yes
COMPLEMENTARY BRT, 50V, 10KOHM, SOT-563 ROHS COMPLIANT: YES
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors | Transistors |
| Product Number | NSBC114EPDXV6T1GOSCT-ND | 025689-NSBC114EPDXV6T1G | 293-NSBC114EPDXV6T1G | NSBC114EPDXV6T1G | NSBC114EPDXV6T1G | NSBC114EPDXV6T1G | NSBC114EPDXV6T1G | 598-NSBC114EPDXV6T1G | 42K2321 | 65AH8876 |
| Product Name | Bipolar Transistor Arrays, Pre-Biased | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NSBC114EPDXV6T1G | 50V 100mA Bipolar Transistor | Bipolar Transistor Arrays, Pre-Biased | Bipolar Transistors - Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | TRANS PREBIAS NPN/PNP SOT563 | Brt Transistor, 50V, 10K/10Kohm, Sot-563, Full Reel; Digital Transistor Polarity Onsemi | Complementary Brt, 50V, 10Kohm, Sot-563 Rohs Compliant Onsemi | |
| Polarity | NPN; PNP | NPN; PNP; 1 NPN, 1 PNP - Pre-Biased (Dual) | NPN; PNP | 1 NPN, 1 PNP - Pre-Biased (Dual); NPN; PNP | NPN; PNP; NPN, PNP | Complementary | ||||
| Package Type | SOT-563, SOT-666 | SOT3; SOT-563 | SOT-563, 6 LEAD | SOT-563, SOT-666 | TO-3 | TO-3 | ||||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | |||||||
| VCEO | 50 volts | 50 volts | 50 volts | |||||||
| PD | 500 milliwatts |
