onsemi Single, Pre-Biased Bipolar Transistors NSBA143EMXWTBG

The NSBA143EMXWTBG is a PNP bias resistor transistor (BRT) in a XDFNW3 package measuring 1.00 mm × 1.00 mm × 0.38 mm max, designed for digital switching and IC input control. It integrates a 4.7 kΩ series base resistor and a 4.7 kΩ base-emitter resistor, with a collector-emitter voltage rating of -50 V and a maximum collector current of 100 mA. Power dissipation is 450 mW at 25°C with a junction-to-ambient thermal resistance of 145 °C/W. It operates from -65°C to +150°C and is AEC-Q101 qualified and RoHS compliant. The device has a dc current gain (hFE) of 15 minimum at -10 V and -5 mA, and a collector-emitter saturation voltage of -0.25 V max at -10 mA collector current and -0.3 mA base current.