Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88A (SC-70-5/SOT-353)
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88A (SC-70-5/SOT-353)
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88A (SC-70-5/SOT-353)
Dual NPN BJT, 50V, 100mA, SOT-363 Product overview: NSB1706DMW5T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 50V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 50V, 100mA, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-NSB1706DMW5T1G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 1083598-NSB1706DMW5T
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SC-88A (SC-70-5 / SOT-353)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 1mA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 5mA, 10V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
TRANS 2NPN PREBIAS 0.25W SC70
BRT TRANSISTOR, 50V, 47K/4.7KOHM, SOT353, FULL REEL; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:47kohmRoHS Compliant: Yes
TRANSISTOR, AEC-Q101, DUAL NPN, SOT-353; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:47kohm; Resistor RoHS Compliant: Yes
TRANS 2NPN PREBIAS 0.25W SC70
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors |
| Product Number | NSB1706DMW5T1GOSCT-ND | 293-NSB1706DMW5T1G | 1083598-NSB1706DMW5T1G | NSB1706DMW5T1G | 88H5086 | 14AC4753 | NSB1706DMW5T1G |
| Product Name | Bipolar Transistor Arrays, Pre-Biased | Dual 50V 100mA Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NSB1706DMW5T1G | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Brt Transistor, 50V, 47K/4.7Kohm, Sot353, Full Reel; Digital Transistor Polarity Onsemi | Transistor, Aec-Q101, Dual Npn, Sot-353; Digital Transistor Polarity Onsemi | Bipolar Transistor Arrays, Pre-Biased |
| Polarity | NPN | NPN | NPN; 2 NPN - Pre-Biased (Dual) | NPN | 2 NPN - Pre-Biased (Dual); NPN | ||
| Package Type | 5-TSSOP, SC-70-5, SOT-353 | SOT3; SC-88A (SC-70-5 / SOT-353) | TO-3 | TO-3; SOT3 | 5-TSSOP, SC-70-5, SOT-353 | ||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | ||||
| VCEO | 50 volts | 50 volts | 50 volts | ||||
| VCBO | 50 volts |
