onsemi Memory NM27C256VE200

Description
EPROM - OTP Memory IC 256Kbit Parallel 200 ns 32-PLCC (14x11.46)
Datasheet
Description
EPROM - OTP Memory IC 256Kbit Parallel 200 ns 32-PLCC (14x11.46)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - NM27C256VE200 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EPROM - OTP Memory IC 256Kbit Parallel 200 ns 32-PLCC (14x11.46)

EPROM - OTP Memory IC 256Kbit Parallel 200 ns 32-PLCC (14x11.46)

Buy Now Datasheet
IC EPROM 256KBIT PARALLEL 32PLCC

IC EPROM 256KBIT PARALLEL 32PLCC

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number NM27C256VE200 NM27C256VE200
Product Name Memory Memory
Memory Category EPROM; EPROM EPROM; EPROM
Access Time 200 ns 200 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

 - LP3913SQX-ADJ/NOPB - Rochester Electronics
Texas Instruments
Specs
Memory Category Flash
Package Type HVQFN48
View Details
Flash Memory - 1882861P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type TSOP
Pins 48
View Details
Memory - AS8SLC128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 10 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 16-3603-01 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers