onsemi Memory NM27C010VE200

Description
EPROM - OTP Memory IC 1Mbit Parallel 200 ns 32-PLCC (14x11.46)
  • Memory - NM27C010VE200 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - NM27C010VE200 - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
EPROM - OTP Memory IC 1Mbit Parallel 200 ns 32-PLCC (14x11.46)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - NM27C010VE200 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
NM27C010VE200
Memory NM27C010VE200
EPROM - OTP Memory IC 1Mbit Parallel 200 ns 32-PLCC (14x11.46)

EPROM - OTP Memory IC 1Mbit Parallel 200 ns 32-PLCC (14x11.46)

Buy Now Datasheet
Memory - NM27C010VE200 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
NM27C010VE200
Memory NM27C010VE200
IC EPROM 1MBIT PARALLEL 32PLCC

IC EPROM 1MBIT PARALLEL 32PLCC

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number NM27C010VE200 NM27C010VE200
Product Name Memory Memory
Memory Category EPROM; EPROM EPROM; EPROM
Access Time 200 ns 200 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
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