onsemi Memory NM27C010VE200

Description
EPROM - OTP Memory IC 1Mbit Parallel 200 ns 32-PLCC (14x11.46)
Datasheet
Description
EPROM - OTP Memory IC 1Mbit Parallel 200 ns 32-PLCC (14x11.46)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - NM27C010VE200 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EPROM - OTP Memory IC 1Mbit Parallel 200 ns 32-PLCC (14x11.46)

EPROM - OTP Memory IC 1Mbit Parallel 200 ns 32-PLCC (14x11.46)

Buy Now Datasheet
IC EPROM 1MBIT PARALLEL 32PLCC

IC EPROM 1MBIT PARALLEL 32PLCC

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number NM27C010VE200 NM27C010VE200
Product Name Memory Memory
Memory Category EPROM; EPROM EPROM; EPROM
Access Time 200 ns 200 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882745P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 32000 kbits
Package Type USON
View Details
Integrated Circuits (ICs) - Memory - Memory - 27C512AE200/883C - Acme Chip Technology Co., Limited
Specs
Memory Category EPROM; Non-Volatile
Density 512 kbits
Package Type 200 ns
View Details
2 suppliers
Memory - SMJ416160 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 80 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details