onsemi Memory NM25C040M8X

Description
EEPROM, 512X8, Serial, CMOS, PDSO8
Request a Quote Datasheet
Description
EEPROM, 512X8, Serial, CMOS, PDSO8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - NM25C040M8X - Rochester Electronics
Newburyport, MA, United States
EEPROM, 512X8, Serial, CMOS, PDSO8

EEPROM, 512X8, Serial, CMOS, PDSO8

Supplier's Site Datasheet
Memory - NM25C040M8X - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 4Kbit SPI 2.1 MHz 8-SOIC

EEPROM Memory IC 4Kbit SPI 2.1 MHz 8-SOIC

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - NM25C040M8X - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
NM25C040M8X
Integrated Circuits (ICs) - Memory - Memory NM25C040M8X
IC EEPROM 4KBIT SPI 2.1MHZ 8SOIC

IC EEPROM 4KBIT SPI 2.1MHZ 8SOIC

Supplier's Site

Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number NM25C040M8X NM25C040M8X NM25C040M8X
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category EEPROM EEPROM; EEPROM EEPROM; Non-Volatile
Logic Family CMOS
Package Type SOP; SOP8 SOIC; 8-SOIC (0.154\", 3.90mm Width) SOIC
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Controllers - BQ2203APN - Quarktwin Technology Ltd.
Texas Instruments
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type DIP; 16-DIP (0.300\", 7.62mm)
Supply Voltage 4.5V ~ 5.5V
View Details
SDRAM - 2420767 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Operating Temperature -40 C (-40 F)
View Details
Memory - AS4DDR232M72A - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR2
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 256000 kbits
View Details
Memory - CAT24C01YI-GT3 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 1 kbits
View Details