onsemi Memory NM24C02M8

Description
EEPROM Memory IC 2Kb (256 x 8) I²C 100kHz 3.5µs 8-SOIC
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Description
EEPROM Memory IC 2Kb (256 x 8) I²C 100kHz 3.5µs 8-SOIC
Request a Quote
Datasheet
Datasheet Summary
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The NM24C02M8 is a 2K-bit CMOS non-volatile electrically erasable memory device that operates on a 2-wire IIC bus interface. It supports an extended operating voltage range of 2.7V to 5.5V and features a maximum clock frequency of 400 kHz. The device has a typical active current of 200 µA and a standby current of 10 µA, with an ultra-low standby current option of 0.1 µA. This EEPROM offers a self-timed write cycle with a typical write time of 6 ms and includes a six-byte page write mode to minimize total write time. The NM24C02M8 is designed for high endurance, with a data retention capability exceeding 40 years and an endurance of 1,000,000 write cycles. It is available in multiple package types, including 8-pin SOIC, and is suitable for various temperature ranges, including commercial, extended, and automotive grades. The device is ideal for applications requiring reliable data storage with low power consumption.

Datasheet Summary
Powered by GS/AI

The NM24C02M8 is a 2K-bit CMOS non-volatile electrically erasable memory device that operates on a 2-wire IIC bus interface. It supports an extended operating voltage range of 2.7V to 5.5V and features a maximum clock frequency of 400 kHz. The device has a typical active current of 200 µA and a standby current of 10 µA, with an ultra-low standby current option of 0.1 µA. This EEPROM offers a self-timed write cycle with a typical write time of 6 ms and includes a six-byte page write mode to minimize total write time. The NM24C02M8 is designed for high endurance, with a data retention capability exceeding 40 years and an endurance of 1,000,000 write cycles. It is available in multiple package types, including 8-pin SOIC, and is suitable for various temperature ranges, including commercial, extended, and automotive grades. The device is ideal for applications requiring reliable data storage with low power consumption.

Suppliers

Company
Product
Description
Supplier Links
Memory - NM24C02M8-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 2Kb (256 x 8) I²C 100kHz 3.5µs 8-SOIC

EEPROM Memory IC 2Kb (256 x 8) I²C 100kHz 3.5µs 8-SOIC

Buy Now Datasheet
IC EEPROM 2KBIT I2C 100KHZ 8SOIC

IC EEPROM 2KBIT I2C 100KHZ 8SOIC

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - NM24C02M8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
NM24C02M8
Integrated Circuits (ICs) - Memory - Memory NM24C02M8
IC EEPROM 2KBIT I2C 100KHZ 8SOIC

IC EEPROM 2KBIT I2C 100KHZ 8SOIC

Supplier's Site
Memory - NM24C02M8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 2Kbit I²C 100 kHz 3.5 µs 8-SOIC

EEPROM Memory IC 2Kbit I²C 100 kHz 3.5 µs 8-SOIC

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number NM24C02M8-ND NM24C02M8 NM24C02M8 NM24C02M8
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category EEPROM EEPROM; EEPROM EEPROM; Non-Volatile EEPROM; EEPROM
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Package Type SOIC; "8-SOIC (0.154"", 3.90mm Width)" SOIC SOIC; 8-SOIC (0.154\", 3.90mm Width)
Supply Voltage 4.5V ~ 5.5V 0degC ~ 70degC (TA) 4.5V ~ 5.5V
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