onsemi Memory NM24C02M8

The NM24C02M8 is a 2K-bit CMOS non-volatile electrically erasable memory device that operates on a 2-wire IIC bus interface. It supports an extended operating voltage range of 2.7V to 5.5V and features a maximum clock frequency of 400 kHz. The device has a typical active current of 200 µA and a standby current of 10 µA, with an ultra-low standby current option of 0.1 µA. This EEPROM offers a self-timed write cycle with a typical write time of 6 ms and includes a six-byte page write mode to minimize total write time. The NM24C02M8 is designed for high endurance, with a data retention capability exceeding 40 years and an endurance of 1,000,000 write cycles. It is available in multiple package types, including 8-pin SOIC, and is suitable for various temperature ranges, including commercial, extended, and automotive grades. The device is ideal for applications requiring reliable data storage with low power consumption.