The NJW3281G is a complementary NPN power transistor designed for high power audio applications and other linear uses. It features a maximum collector-emitter voltage (VCEO) of 250V and can handle continuous collector currents up to 15A, with a peak current rating of 30A. The transistor exhibits a high power dissipation capability of 200W and is characterized by a low collector-emitter saturation voltage of 600mV at 8A. With a DC current gain (hFE) of 75 at 3A and 5V, the NJW3281G provides reliable performance with excellent gain linearity and a high frequency response, making it suitable for high-end consumer audio products, professional audio amplifiers, and public address systems. The device is RoHS compliant and halogen-free, ensuring it meets modern environmental standards. The operating temperature range is from -65¬8C to +150¬8C, allowing for versatility in various applications. Engineers looking for a robust transistor for audio amplification or similar applications may find the NJW3281G to be a suitable choice due to its high performance specifications and reliability.
NPN BJT, 250V, 15A, 200W, 30MHz, TO-218-3 Product overview: NJW3281G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 15A, 200W. Search-friendly keywords include transistor, BJT, switching, amplification, 250V, 15A, 200W, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NJW3281G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 1083083-NJW3281G
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 30MHz
Transistor Polarity: NPN
Family Name: NJW3281
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-3P
Maximum Current Collector: 15A
VCEO Maximum Collector-Emitter Breakdown Voltage: 250V
Max Vce (sat): 600mV @ 800mA, 8A
Collector Cut-off Current(Max): 50μA (ICBO)
Typical Gain (hFE) (Min): 75 @ 3A, 5V
Maximum Power Dissipation: 200W
Alternative Parts (Cross-Reference): 2SC5200-R(Q); 2SC5200-R(ONK); 2SC5200-R(LBYH); 2SC5200-O(PAIO);
Introduction Date: September 27, 2007
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
TRANS NPN 250V 15A TO3P-3L
Bipolar (BJT) Transistor NPN 250V 15A 30MHz 200W Through Hole TO-3P-3L
NPN Power Transistor 250V 15A 200W TO-3P
NPN Power Transistor 250V 15A 200W TO-3P
NPN Power Transistor 250V 15A 200W TO-3P
Bipolar Transistors - BJT 200 W BETA AUDIO
AUDIO TRANSISTOR, NPN, 250V; Transistor Polarity:NPN; Collector Emitter Voltage Max:250V; Continuous Collector Current:15A; Power Dissipation:200W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:30MHz RoHS Compliant: Yes
TRANSISTOR, BIPOL, NPN, 250V, TO-3P; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:250V; Transition Frequency ft:30MHz; Power Dissipation Pd:200W; DC Collector Current:15A; DC Current Gain hFE:45hFE; Transistor Case RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | RS Components, Ltd. | RS Components, Ltd. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors |
| Product Number | 276-NJW3281G | 1083083-NJW3281G | NJW3281G | NJW3281GOS-ND | 7905460 | 7905460P | NJW3281G | 89M5494 | 81Y6983 |
| Product Name | 250V 15A 200W Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single - NJW3281G | Single Bipolar Transistors | Single Bipolar Transistors | Bipolar Transistors | Bipolar Transistors | Bipolar Transistors - BJT | Audio Transistor, Npn, 250V; Transistor Polarity Onsemi | Transistor, Bipol, Npn, 250V, To-3P; Transistor Polarity Onsemi |
| Polarity | NPN | NPN; NPN | NPN; NPN | NPN | NPN | NPN | NPN | NPN | |
| IC(max) | 15000 milliamps | 15000 milliamps | 15000 milliamps | ||||||
| VCEO | 60 volts | 250 volts | 250 volts | ||||||
| VCBO | 250 volts | ||||||||
| fT | 30 MHz |
