onsemi 6.0 A 100 V DPAK Bipolar Transistor NJVMJD41CT4G

Description
6.0 A, 100 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL Product overview: NJVMJD41CT4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 6.0 A, 100 V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 6.0 A, 100 V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NJVMJD41CT4G can be used for catalog matching and distributor lookup.
  • Single Bipolar Transistors - 488-NJVMJD41CT4GTR-ND - DigiKey
    DigiKey
  • Single Bipolar Transistors - 488-NJVMJD41CT4GCT-ND - DigiKey
    DigiKey
  • Single Bipolar Transistors - 488-NJVMJD41CT4GDKR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 968606-NJVMJD41CT4G - Win Source Electronics
    Win Source Electronics
  • Single Bipolar Transistors - NJVMJD41CT4G - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NJVMJD41CT4G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • TO-252-3 Pre-ordered transistors RoHS - 598-NJVMJD41CT4G - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
6.0 A, 100 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL Product overview: NJVMJD41CT4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 6.0 A, 100 V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 6.0 A, 100 V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NJVMJD41CT4G can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
ERSAELECTRONICS PTE. LTD.
Singapore
6.0 A 100 V DPAK Bipolar Transistor
276-NJVMJD41CT4G
6.0 A 100 V DPAK Bipolar Transistor 276-NJVMJD41CT4G
6.0 A, 100 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL Product overview: NJVMJD41CT4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 6.0 A, 100 V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 6.0 A, 100 V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NJVMJD41CT4G can be used for catalog matching and distributor lookup.

6.0 A, 100 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL Product overview: NJVMJD41CT4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 6.0 A, 100 V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 6.0 A, 100 V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NJVMJD41CT4G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - 488-NJVMJD41CT4GTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
488-NJVMJD41CT4GTR-ND
Single Bipolar Transistors 488-NJVMJD41CT4GTR-ND
Bipolar (BJT) Transistor NPN 100V 6A 3MHz 1.75W Surface Mount DPAK

Bipolar (BJT) Transistor NPN 100V 6A 3MHz 1.75W Surface Mount DPAK

Buy Now Datasheet
Single Bipolar Transistors - 488-NJVMJD41CT4GCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
488-NJVMJD41CT4GCT-ND
Single Bipolar Transistors 488-NJVMJD41CT4GCT-ND
TRANS NPN 100V 6A DPAK

TRANS NPN 100V 6A DPAK

Buy Now Datasheet
Single Bipolar Transistors - 488-NJVMJD41CT4GDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
488-NJVMJD41CT4GDKR-ND
Single Bipolar Transistors 488-NJVMJD41CT4GDKR-ND
TRANS NPN 100V 6A DPAK

TRANS NPN 100V 6A DPAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 968606-NJVMJD41CT4G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
968606-NJVMJD41CT4G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 968606-NJVMJD41CT4G
Win Source Part Number: 968606-NJVMJD41CT4G Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Series: Automotive, AEC-Q101 Package: Tape & Reel (TR) Standard Package: 2,500 Mounting: SMD (SMT) Power - Max: 1.75 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 6 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V Frequency - Transition: 3MHz Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 80 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: 488-NJVMJD41CT4GTR Base Product Number: NJVMJD41

Win Source Part Number: 968606-NJVMJD41CT4G
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Series: Automotive, AEC-Q101
Package: Tape & Reel (TR)
Standard Package: 2,500
Mounting: SMD (SMT)
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
Frequency - Transition: 3MHz
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: 488-NJVMJD41CT4GTR
Base Product Number: NJVMJD41

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Single Bipolar Transistors - NJVMJD41CT4G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
NJVMJD41CT4G
Single Bipolar Transistors NJVMJD41CT4G
TRANS NPN 100V 6A DPAK

TRANS NPN 100V 6A DPAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NJVMJD41CT4G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
NJVMJD41CT4G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) NJVMJD41CT4G
TRANS NPN 100V 6A DPAK

TRANS NPN 100V 6A DPAK

Supplier's Site
TO-252-3 Pre-ordered transistors RoHS - 598-NJVMJD41CT4G - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
TO-252-3 Pre-ordered transistors RoHS
598-NJVMJD41CT4G
TO-252-3 Pre-ordered transistors RoHS 598-NJVMJD41CT4G
TO-252-3 Pre-ordered transistors RoHS

TO-252-3 Pre-ordered transistors RoHS

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
NJVMJD41CT4G
Bipolar Transistors - BJT NJVMJD41CT4G
Bipolar Transistors - BJT BIP NPN 6A 100V TR

Bipolar Transistors - BJT BIP NPN 6A 100V TR

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 276-NJVMJD41CT4G 488-NJVMJD41CT4GTR-ND 968606-NJVMJD41CT4G NJVMJD41CT4G NJVMJD41CT4G 598-NJVMJD41CT4G NJVMJD41CT4G
Product Name 6.0 A 100 V DPAK Bipolar Transistor Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) TO-252-3 Pre-ordered transistors RoHS Bipolar Transistors - BJT
Polarity NPN NPN NPN NPN; NPN
IC(max) 0.0500 milliamps 6000 milliamps 6000 milliamps 6000 milliamps
VCEO 100 volts 100 volts 100 volts
VCBO 100 volts
PD 1750 milliwatts
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