onsemi Single Bipolar Transistors NJVMJD350T4G

Bipolar (BJT) Transistor PNP 300V 500mA 10MHz 1.56W Surface Mount DPAK

Bipolar (BJT) Transistor PNP 300V 500mA 10MHz 1.56W Surface Mount DPAK

Bipolar (BJT) Transistor PNP 300V 500mA 10MHz 1.56W Surface Mount DPAK

0.5 A, 300 V High Voltage PNP Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL Product overview: NJVMJD350T4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.5 A, 300 V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 0.5 A, 300 V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NJVMJD350T4G can be used for catalog matching and distributor lookup.

Win Source Part Number: 1002884-NJVMJD350T4G
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Power - Max: 1.56 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 10MHz
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Temperature Range - Operating: -65°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 77 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: 2156-NJVMJD350T4G-OS,NJVMJD350T4GOSTR,NJVMJD350T4GOSCT,NJVMJD350T4G-ND,ONSONSNJVMJD350T4G,NJVMJD350T4GOSDKR
Base Product Number: NJVMJD350