onsemi 3 A 40 V DPAK Bipolar Transistor NJVMJD32T4G

Description
3 A, 40 V PNP Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL Product overview: NJVMJD32T4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3 A, 40 V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 3 A, 40 V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NJVMJD32T4G can be used for catalog matching and distributor lookup.
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Description
3 A, 40 V PNP Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL Product overview: NJVMJD32T4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3 A, 40 V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 3 A, 40 V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NJVMJD32T4G can be used for catalog matching and distributor lookup.
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Datasheet
Datasheet Summary
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The Transistor, Bipolar, PNP, 40V, 3A, TO252 is designed for general-purpose amplifier and low-speed switching applications. It features a maximum collector-emitter voltage of 40V and a continuous collector current rating of 3A. The device has a total power dissipation of 15W at a case temperature of 25¬8C, with a thermal resistance of 8.3¬8C/W from junction to case. It is available in a DPAK package suitable for surface mount applications and is RoHS compliant. The transistor exhibits a DC current gain ranging from 10 to 50, with a collector-emitter saturation voltage of up to 1.2V at 3A. The operating temperature range is from -65¬8C to +150¬8C, making it suitable for various environmental conditions. This product is also AEC-Q101 qualified, indicating its reliability for automotive applications.

Datasheet Summary
Powered by GS/AI

The Transistor, Bipolar, PNP, 40V, 3A, TO252 is designed for general-purpose amplifier and low-speed switching applications. It features a maximum collector-emitter voltage of 40V and a continuous collector current rating of 3A. The device has a total power dissipation of 15W at a case temperature of 25¬8C, with a thermal resistance of 8.3¬8C/W from junction to case. It is available in a DPAK package suitable for surface mount applications and is RoHS compliant. The transistor exhibits a DC current gain ranging from 10 to 50, with a collector-emitter saturation voltage of up to 1.2V at 3A. The operating temperature range is from -65¬8C to +150¬8C, making it suitable for various environmental conditions. This product is also AEC-Q101 qualified, indicating its reliability for automotive applications.

Suppliers

Company
Product
Description
Supplier Links
Singapore
3 A 40 V DPAK Bipolar Transistor
276-NJVMJD32T4G
3 A 40 V DPAK Bipolar Transistor 276-NJVMJD32T4G
3 A, 40 V PNP Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL Product overview: NJVMJD32T4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3 A, 40 V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 3 A, 40 V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NJVMJD32T4G can be used for catalog matching and distributor lookup.

3 A, 40 V PNP Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL Product overview: NJVMJD32T4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3 A, 40 V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 3 A, 40 V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NJVMJD32T4G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - 488-NJVMJD32T4GTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
488-NJVMJD32T4GTR-ND
Single Bipolar Transistors 488-NJVMJD32T4GTR-ND
Bipolar (BJT) Transistor PNP 40V 3A 3MHz 1.56W Surface Mount DPAK

Bipolar (BJT) Transistor PNP 40V 3A 3MHz 1.56W Surface Mount DPAK

Buy Now Datasheet
Single Bipolar Transistors - 488-NJVMJD32T4GCT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
488-NJVMJD32T4GCT-ND
Single Bipolar Transistors 488-NJVMJD32T4GCT-ND
TRANS PNP 40V 3A DPAK

TRANS PNP 40V 3A DPAK

Buy Now Datasheet
Single Bipolar Transistors - 488-NJVMJD32T4GDKR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
488-NJVMJD32T4GDKR-ND
Single Bipolar Transistors 488-NJVMJD32T4GDKR-ND
TRANS PNP 40V 3A DPAK

TRANS PNP 40V 3A DPAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1082348-NJVMJD32T4G - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1082348-NJVMJD32T4G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1082348-NJVMJD32T4G
Win Source Part Number: 1082348-NJVMJD32T4G Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Tape & Reel (TR) Standard Package: 2,500 Mounting: SMD (SMT) Power - Max: 1.56 W Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 3 A Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Frequency - Transition: 3MHz Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Temperature Range - Operating: -65°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): MJD32RLG; 2SB1202T-TL-E; 2SA2126-TL-E; 2SB1183TL; 2DB1182Q-13; 2SB1182TLQ; ECCN: EAR99 Fake Threat In the Open Market: 84 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: 2156-NJVMJD32T4G-OS, ONSONSNJVMJD32T4G Base Product Number: NJVMJD32

Win Source Part Number: 1082348-NJVMJD32T4G
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Tape & Reel (TR)
Standard Package: 2,500
Mounting: SMD (SMT)
Power - Max: 1.56 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 3 A
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Temperature Range - Operating: -65°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): MJD32RLG; 2SB1202T-TL-E; 2SA2126-TL-E; 2SB1183TL; 2DB1182Q-13; 2SB1182TLQ;
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: 2156-NJVMJD32T4G-OS,ONSONSNJVMJD32T4G
Base Product Number: NJVMJD32

Buy Now Datasheet
Single Bipolar Transistors - NJVMJD32T4G - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
NJVMJD32T4G
Single Bipolar Transistors NJVMJD32T4G
TRANS PNP 40V 3A DPAK

TRANS PNP 40V 3A DPAK

Supplier's Site Datasheet
Transistor, Bipolar, Pnp, 40V, 3A, To252; Transistor Polarity Onsemi - 97W6309 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipolar, Pnp, 40V, 3A, To252; Transistor Polarity Onsemi
97W6309
Transistor, Bipolar, Pnp, 40V, 3A, To252; Transistor Polarity Onsemi 97W6309
TRANSISTOR, BIPOLAR, PNP, 40V, 3A, TO252; Transistor Polarity:PNP; Collector Emitter Voltage Max:40V; Continuous Collector Current:3A; Power Dissipation:15W; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes

TRANSISTOR, BIPOLAR, PNP, 40V, 3A, TO252; Transistor Polarity:PNP; Collector Emitter Voltage Max:40V; Continuous Collector Current:3A; Power Dissipation:15W; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
NJVMJD32T4G
Bipolar Transistors - BJT NJVMJD32T4G
Bipolar Transistors - BJT BIP DPAK PNP 3A 40V TR

Bipolar Transistors - BJT BIP DPAK PNP 3A 40V TR

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NJVMJD32T4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
NJVMJD32T4G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) NJVMJD32T4G
TRANS PNP 40V 3A DPAK

TRANS PNP 40V 3A DPAK

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics ODG (Origin Data Global) Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 276-NJVMJD32T4G 488-NJVMJD32T4GTR-ND 1082348-NJVMJD32T4G NJVMJD32T4G 97W6309 NJVMJD32T4G NJVMJD32T4G
Product Name 3 A 40 V DPAK Bipolar Transistor Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Single Bipolar Transistors Transistor, Bipolar, Pnp, 40V, 3A, To252; Transistor Polarity Onsemi Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP PNP; PNP PNP
IC(max) 3000 milliamps 3000 milliamps 3000 milliamps 3000 milliamps 3000 milliamps
VCEO 40 volts 40 volts 40 volts 40 volts
VCBO 40 volts
PD 1560 milliwatts 15000 milliwatts
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