onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single NJVMJD31T4G

Description
Manufacturer: onsemi Win Source Part Number: 1325084-NJVMJD31T4G Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Packaging: Reel - TR Standard Package: 2,500 Mounting: Surface Mount Power - Max: 1.56 W Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 3 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Frequency - Transition: 3MHz Supplier Device Package: DPAK Temperature Range - Operating: -65°C ~ 150°C (TJ) Case / Package: TO-252-3, DPak (2 Leads + Tab), SC-63 ECCN: EAR99 Fake Threat In the Open Market: 81 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: 488-NJVMJD31T4GTR,48 8-NJVMJD31T4GDKR,NJV MJD31T4G-ND,488-NJVM JD31T4GCT Base Product Number: NJVMJD31 RoHS Status: ROHS3 Compliant
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Description
Manufacturer: onsemi Win Source Part Number: 1325084-NJVMJD31T4G Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Packaging: Reel - TR Standard Package: 2,500 Mounting: Surface Mount Power - Max: 1.56 W Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 3 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Frequency - Transition: 3MHz Supplier Device Package: DPAK Temperature Range - Operating: -65°C ~ 150°C (TJ) Case / Package: TO-252-3, DPak (2 Leads + Tab), SC-63 ECCN: EAR99 Fake Threat In the Open Market: 81 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: 488-NJVMJD31T4GTR,48 8-NJVMJD31T4GDKR,NJV MJD31T4G-ND,488-NJVM JD31T4GCT Base Product Number: NJVMJD31 RoHS Status: ROHS3 Compliant
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1325084-NJVMJD31T4G - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1325084-NJVMJD31T4G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1325084-NJVMJD31T4G
Manufacturer: onsemi Win Source Part Number: 1325084-NJVMJD31T4G Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Packaging: Reel - TR Standard Package: 2,500 Mounting: Surface Mount Power - Max: 1.56 W Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 3 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Frequency - Transition: 3MHz Supplier Device Package: DPAK Temperature Range - Operating: -65°C ~ 150°C (TJ) Case / Package: TO-252-3, DPak (2 Leads + Tab), SC-63 ECCN: EAR99 Fake Threat In the Open Market: 81 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: 488-NJVMJD31T4GTR,48 8-NJVMJD31T4GDKR,NJV MJD31T4G-ND,488-NJVM JD31T4GCT Base Product Number: NJVMJD31 RoHS Status: ROHS3 Compliant

Manufacturer: onsemi
Win Source Part Number: 1325084-NJVMJD31T4G
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Packaging: Reel - TR
Standard Package: 2,500
Mounting: Surface Mount
Power - Max: 1.56 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 3 A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Temperature Range - Operating: -65°C ~ 150°C (TJ)
Case / Package: TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN: EAR99
Fake Threat In the Open Market: 81
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 488-NJVMJD31T4GTR,488-NJVMJD31T4GDKR,NJVMJD31T4G-ND,488-NJVMJD31T4GCT
Base Product Number: NJVMJD31
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Singapore
3.0 A 40 V DPAK Bipolar Transistor
276-NJVMJD31T4G
3.0 A 40 V DPAK Bipolar Transistor 276-NJVMJD31T4G
3.0 A, 40 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL Product overview: NJVMJD31T4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3.0 A, 40 V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 3.0 A, 40 V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NJVMJD31T4G can be used for catalog matching and distributor lookup.

3.0 A, 40 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL Product overview: NJVMJD31T4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3.0 A, 40 V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 3.0 A, 40 V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NJVMJD31T4G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - NJVMJD31T4G - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
NJVMJD31T4G
Single Bipolar Transistors NJVMJD31T4G
TRANS NPN 40V 3A DPAK

TRANS NPN 40V 3A DPAK

Supplier's Site Datasheet
Single Bipolar Transistors - 488-NJVMJD31T4GTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
488-NJVMJD31T4GTR-ND
Single Bipolar Transistors 488-NJVMJD31T4GTR-ND
Bipolar (BJT) Transistor NPN 40V 3A 3MHz 1.56W Surface Mount DPAK

Bipolar (BJT) Transistor NPN 40V 3A 3MHz 1.56W Surface Mount DPAK

Buy Now Datasheet
Single Bipolar Transistors - 488-NJVMJD31T4GDKR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
488-NJVMJD31T4GDKR-ND
Single Bipolar Transistors 488-NJVMJD31T4GDKR-ND
Bipolar (BJT) Transistor NPN 40V 3A 3MHz 1.56W Surface Mount DPAK

Bipolar (BJT) Transistor NPN 40V 3A 3MHz 1.56W Surface Mount DPAK

Buy Now Datasheet
Single Bipolar Transistors - 488-NJVMJD31T4GCT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
488-NJVMJD31T4GCT-ND
Single Bipolar Transistors 488-NJVMJD31T4GCT-ND
Bipolar (BJT) Transistor NPN 40V 3A 3MHz 1.56W Surface Mount DPAK

Bipolar (BJT) Transistor NPN 40V 3A 3MHz 1.56W Surface Mount DPAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NJVMJD31T4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
NJVMJD31T4G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) NJVMJD31T4G
TRANS NPN 40V 3A DPAK

TRANS NPN 40V 3A DPAK

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
NJVMJD31T4G
Bipolar Transistors - BJT NJVMJD31T4G
Bipolar Transistors - BJT BIP DPAK NPN 3A 40V TR

Bipolar Transistors - BJT BIP DPAK NPN 3A 40V TR

Buy Now Datasheet
Transistor, Bipolar, Npn, 40V, 3A, To252; Transistor Polarity Onsemi - 97W6308 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipolar, Npn, 40V, 3A, To252; Transistor Polarity Onsemi
97W6308
Transistor, Bipolar, Npn, 40V, 3A, To252; Transistor Polarity Onsemi 97W6308
TRANSISTOR, BIPOLAR, NPN, 40V, 3A, TO252; Transistor Polarity:NPN; Collector Emitter Voltage Max:40V; Continuous Collector Current:3A; Power Dissipation:15W; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes

TRANSISTOR, BIPOLAR, NPN, 40V, 3A, TO252; Transistor Polarity:NPN; Collector Emitter Voltage Max:40V; Continuous Collector Current:3A; Power Dissipation:15W; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1325084-NJVMJD31T4G 276-NJVMJD31T4G NJVMJD31T4G 488-NJVMJD31T4GTR-ND NJVMJD31T4G NJVMJD31T4G 97W6308
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 3.0 A 40 V DPAK Bipolar Transistor Single Bipolar Transistors Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT Transistor, Bipolar, Npn, 40V, 3A, To252; Transistor Polarity Onsemi
Polarity NPN NPN NPN; NPN NPN NPN
Package Type SOT3; TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 DPAK TO-3
Packing Method Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 3000 milliamps 3000 milliamps 3000 milliamps 3000 milliamps 3000 milliamps
Power Gain 10 dB
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